Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

J. Pal; M. A. Migliorato; C. K. Li; Y. R. Wu; B. G. Crutchley; I. P. Marko; S. J. Sweeney

doi:10.1063/1.4818794

Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

J. Pal, M. A. Migliorato, C. K. Li, Y. R. Wu, B. G. Crutchley, I. P. Marko, S. J. Sweeney

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Abstract

We report calculations of the strain dependence of the piezoelectric field within InGaN multi-quantum wells light emitting diodes. Such fields are well known to be a strong limiting factor of the device performance. By taking into account the nonlinear piezoelectric coefficients, which in particular cases predict opposite trends compared to the commonly used linear coefficients, a significant improvement of the spontaneous emission rate can be achieved as a result of a reduction of the internal field. We propose that such reduction of the field can be obtained by including a metamorphic InGaN layer below the multiple quantum well active region. © 2013 AIP Publishing LLC.

Original language	English
Article number	073104
Journal	Journal of Applied Physics
Volume	114
Issue number	7
DOIs	https://doi.org/10.1063/1.4818794
Publication status	Published - 21 Aug 2013

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title = "Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management",

abstract = "We report calculations of the strain dependence of the piezoelectric field within InGaN multi-quantum wells light emitting diodes. Such fields are well known to be a strong limiting factor of the device performance. By taking into account the nonlinear piezoelectric coefficients, which in particular cases predict opposite trends compared to the commonly used linear coefficients, a significant improvement of the spontaneous emission rate can be achieved as a result of a reduction of the internal field. We propose that such reduction of the field can be obtained by including a metamorphic InGaN layer below the multiple quantum well active region. {\textcopyright} 2013 AIP Publishing LLC.",

author = "J. Pal and Migliorato, {M. A.} and Li, {C. K.} and Wu, {Y. R.} and Crutchley, {B. G.} and Marko, {I. P.} and Sweeney, {S. J.}",

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AU - Pal, J.

AU - Migliorato, M. A.

AU - Li, C. K.

AU - Wu, Y. R.

AU - Crutchley, B. G.

AU - Marko, I. P.

AU - Sweeney, S. J.

PY - 2013/8/21

Y1 - 2013/8/21

N2 - We report calculations of the strain dependence of the piezoelectric field within InGaN multi-quantum wells light emitting diodes. Such fields are well known to be a strong limiting factor of the device performance. By taking into account the nonlinear piezoelectric coefficients, which in particular cases predict opposite trends compared to the commonly used linear coefficients, a significant improvement of the spontaneous emission rate can be achieved as a result of a reduction of the internal field. We propose that such reduction of the field can be obtained by including a metamorphic InGaN layer below the multiple quantum well active region. © 2013 AIP Publishing LLC.

AB - We report calculations of the strain dependence of the piezoelectric field within InGaN multi-quantum wells light emitting diodes. Such fields are well known to be a strong limiting factor of the device performance. By taking into account the nonlinear piezoelectric coefficients, which in particular cases predict opposite trends compared to the commonly used linear coefficients, a significant improvement of the spontaneous emission rate can be achieved as a result of a reduction of the internal field. We propose that such reduction of the field can be obtained by including a metamorphic InGaN layer below the multiple quantum well active region. © 2013 AIP Publishing LLC.

U2 - 10.1063/1.4818794

DO - 10.1063/1.4818794

M3 - Article

SN - 1089-7550

VL - 114

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 073104

ER -

Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

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