TY - JOUR
T1 - Enhancement ZnO nanofiber as semiconductor for dye-sensitized solar cells by using Al doped
AU - Sutanto, Bayu
AU - Arifin, Zainal
AU - Suyitno, Suyitno
AU - Hadi, Syamsul
AU - Pranoto, Lia Muliani
AU - Agustia, Yuda Virgantara
PY - 2016/3/29
Y1 - 2016/3/29
N2 - The purpose of this research is to produce Al-doped ZnO (AZO) nanofibers in order to enhance the performance of Dye-Sensitized Solar Cell (DSSC). AZO nanofiber semiconductor was manufactured by electrospinning process of Zinc Acetate Dehydrate (Zn(CH3COO)2) solution and precursor of Polyvinyl Acetate (PVA). The doping process of Al was built by dissolving 0-4 wt% in concentrations of AlCl3 to Zinc Acetate. AZO green fiber was sintered at temperature 500°C for an hour. The result shows that Al doped ZnO had capability to increase the electrical conductivity of semiconductor for doping 0, 1, 2, 3, and 4 wt% for 2,07×10−3; 3,71×10−3; 3,59 ×10−3; 3,10 ×10−3 and 2,74 ×10−3 S/m. The best performance of DSSC with 3 cm2 active area was obtained at 1 wt% Al-ZnO which the value of VOC, ISC, FF, and efficiency were 508,43 mV, 3,125 mA, 38,76%, and 0,411% respectively. These coincide with the electrical conductivity of semiconductor and the crystal size of XRD result that has the smallest size as compared to other doping variations.
AB - The purpose of this research is to produce Al-doped ZnO (AZO) nanofibers in order to enhance the performance of Dye-Sensitized Solar Cell (DSSC). AZO nanofiber semiconductor was manufactured by electrospinning process of Zinc Acetate Dehydrate (Zn(CH3COO)2) solution and precursor of Polyvinyl Acetate (PVA). The doping process of Al was built by dissolving 0-4 wt% in concentrations of AlCl3 to Zinc Acetate. AZO green fiber was sintered at temperature 500°C for an hour. The result shows that Al doped ZnO had capability to increase the electrical conductivity of semiconductor for doping 0, 1, 2, 3, and 4 wt% for 2,07×10−3; 3,71×10−3; 3,59 ×10−3; 3,10 ×10−3 and 2,74 ×10−3 S/m. The best performance of DSSC with 3 cm2 active area was obtained at 1 wt% Al-ZnO which the value of VOC, ISC, FF, and efficiency were 508,43 mV, 3,125 mA, 38,76%, and 0,411% respectively. These coincide with the electrical conductivity of semiconductor and the crystal size of XRD result that has the smallest size as compared to other doping variations.
UR - https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984559358&doi=10.1063%2f1.4943449&partnerID=40&md5=c3845b12c7f3c7482ffc0a9b99c0ff25
U2 - 10.1063/1.4943449
DO - 10.1063/1.4943449
M3 - Article
SN - 0094-243X
VL - 1717
JO - AIP Conference Proceedings
JF - AIP Conference Proceedings
IS - 1
M1 - 040006
T2 - 4th International Conference and Exhibition on Sustainable Energy and Advanced Materials
Y2 - 11 November 2015 through 12 November 2015
ER -
