Epitaxial island growth and the Stranski-Krastanow transition

A. G. Cullis; D. J. Norris; T. Walther; M. A. Migliorato; M. Hopkinson

Epitaxial island growth and the Stranski-Krastanow transition

A. G. Cullis, D. J. Norris, T. Walther, M. A. Migliorato, M. Hopkinson

Research output: Contribution to journal › Article › peer-review

Abstract

The way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat 'wetting' layer is examined in detail. Experimentally measured critical 'wetting' layer thicknesses for the InxGa1-xAs/GaAs system (x = 0.25 - 1) are demonstrated to show good agreement with values calculated using a segregation model. The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered to be important also for all other epitaxial systems exhibiting the transition.

Original language	English
Pages (from-to)	3-10
Number of pages	7
Journal	Materials Research Society Symposium Proceedings
Volume	696
Publication status	Published - 2002

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title = "Epitaxial island growth and the Stranski-Krastanow transition",

abstract = "The way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat 'wetting' layer is examined in detail. Experimentally measured critical 'wetting' layer thicknesses for the InxGa1-xAs/GaAs system (x = 0.25 - 1) are demonstrated to show good agreement with values calculated using a segregation model. The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered to be important also for all other epitaxial systems exhibiting the transition.",

author = "Cullis, {A. G.} and Norris, {D. J.} and T. Walther and Migliorato, {M. A.} and M. Hopkinson",

note = "Times Cited: 0 Stach, EA Chason, EH Hull, R Bader, SD Symposium on Current Issues in Heteroepitaxial Growth-Stress Relaxation and Self Assembly held at the 2001 MRS Fall Meeting NOV 26-29, 2001 BOSTON, MA",

year = "2002",

language = "English",

volume = "696",

pages = "3--10",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Epitaxial island growth and the Stranski-Krastanow transition

AU - Cullis, A. G.

AU - Norris, D. J.

AU - Walther, T.

AU - Migliorato, M. A.

AU - Hopkinson, M.

N1 - Times Cited: 0 Stach, EA Chason, EH Hull, R Bader, SD Symposium on Current Issues in Heteroepitaxial Growth-Stress Relaxation and Self Assembly held at the 2001 MRS Fall Meeting NOV 26-29, 2001 BOSTON, MA

PY - 2002

Y1 - 2002

N2 - The way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat 'wetting' layer is examined in detail. Experimentally measured critical 'wetting' layer thicknesses for the InxGa1-xAs/GaAs system (x = 0.25 - 1) are demonstrated to show good agreement with values calculated using a segregation model. The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered to be important also for all other epitaxial systems exhibiting the transition.

AB - The way in which the Stranski-Krastanow epitaxial islanding transition can be controlled by strain due to elemental segregation within the initially-formed flat 'wetting' layer is examined in detail. Experimentally measured critical 'wetting' layer thicknesses for the InxGa1-xAs/GaAs system (x = 0.25 - 1) are demonstrated to show good agreement with values calculated using a segregation model. The strain energy associated with the segregated surface layer is determined for the complete range of deposited In concentrations using atomistic simulations. The segregation-mediated driving force for the Stranski-Krastanow transition is considered to be important also for all other epitaxial systems exhibiting the transition.

M3 - Article

SN - 0272-9172

VL - 696

SP - 3

EP - 10

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

ER -

Epitaxial island growth and the Stranski-Krastanow transition

Abstract

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