Abstract
InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate. © 2010 Copyright SPIE - The International Society for Optical Engineering.
Original language | English |
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Article number | 76031D |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 7603 |
DOIs | |
Publication status | Published - 2010 |
Keywords
- InGaN
- Lift-off
- Metalorganic vapour phase epitaxy
- Pulsed laser deposition
- Si substrate
- ZnO