Epitaxial MOVPE growth of highly c-axis oriented InGaN/GaN films on ZnO-buffered Si (111) substrates

Duncan Mcgrouther, A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, G. Orsal, T. Moudakir, S. Gautier, V. E. Sandana, F. Jomard, M. Abid, M. Molinari, M. Troyon, P. L. Voss, D. McGrouther, J. N. Chapman

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    InGaN/GaN layers were grown on ZnO-buffered Si (111) substrates by metalorganic vapour phase epitaxy (MOVPE). The dissociation of ZnO observed during conventional MOVPE growth of InGaN/GaN was combated through the use of a low pressure/temperature MOVPE approach with N2 as a carrier gas and dimethylhydrazine added to the ammonia (nitrogen precursor) in order to enhance the concentration of atomic nitrogen at relatively low temperature. Electron Microscopy of cross-sections, High Resolution X-Ray Diffraction (HR-XRD), secondary ion mass spectroscopy and cathodoluminescence studies suggested that single phase wurtzite InGaN layers with between about 17.5 and 21.5% indium were grown epitaxially, with no evidence of back-etching of the ZnO templates. HR-XRD revealed highly pronounced c-axis texture for both the InGaN/GaN and ZnO. Immersion in dilute nitric acid dissolved the ZnO such that the InGaN/GaN could be lifted-off from the substrate. © 2010 Copyright SPIE - The International Society for Optical Engineering.
    Original languageEnglish
    Article number76031D
    JournalProceedings of SPIE - The International Society for Optical Engineering
    Publication statusPublished - 2010


    • InGaN
    • Lift-off
    • Metalorganic vapour phase epitaxy
    • Pulsed laser deposition
    • Si substrate
    • ZnO


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