@inproceedings{07f17efb00854858b818b149c08463d7,
title = "Erbium doped gallium arsenide a self-organizing low dimensional system",
abstract = "The growth of erbium doped gallium arsenide by MBE at normal substrate temperatures (580°C) is constrained by a solubility limit of 8×1017 cm-3. This is much less than is desirable for optical emitters using the forbidden 4f transitions of Er3+ to produce radiation at 1.54μm. We have developed an MBE technique where it is possible to produce spherical mesoscopic precipitates containing erbium as a matrix element within the gallium arsenide. Structural and analytical studies indicate that the precipitate is cubic (rock salt) erbium arsenide. The physical size of the precipitates is self limiting as a result of surface migration occurring during MBE growth. By adjusting the growth conditions it is possible to produce an array of uniform erbium arsenide quantum dots of a size chosen from the range 10-20 A. The dot be varied by changing the erbium flux.",
author = "Peaker, {A. R.} and H. Efeoglu and Langer, {J. M.} and Wright, {A. C.} and I. Poole and Singer, {K. E.}",
year = "1993",
month = jan,
day = "1",
language = "English",
isbn = "1558991972",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "337--345",
editor = "Pomrenke, {Gernot S.} and Klein, {Paul B.} and Langer, {Dietrich W.}",
booktitle = "Rare Earth Doped Semiconductors",
address = "United States",
note = "Proceedings of the 1993 Materials Society Spring Meeting ; Conference date: 13-04-1993 Through 15-04-1993",
}