Erbium in silicon-germanium quantum wells

A. T. Naveed; M. Q. Huda; K. F. Abd El-Rahman; J. Hartung; J. H. Evans-Freeman; A. R. Peaker; D. C. Houghton; C. Jeynes; W. P. Gillin

doi:10.1016/S0022-2313(98)00133-1

Erbium in silicon-germanium quantum wells

A. T. Naveed, M. Q. Huda, K. F. Abd El-Rahman, J. Hartung, J. H. Evans-Freeman^*, A. R. Peaker, D. C. Houghton, C. Jeynes, W. P. Gillin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Strained Si_1-xGe_x/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si_1-xGe_x/Si quantum wells and relaxed Si_1-xGe_x, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1x10¹⁸ and 5x10¹⁸ cm^-3 throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si_1-xGe_x/Si layers, but erbium-implanted samples containing Si_1-xGe_x exhibit defect luminescence in the region of 0.9-1.0 eV. These defects are also present when Si_1-xGe_x/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si_0.87Ge_0.13/Si structure at a drive current density of only 1.8 mA/cm².

Original language	English
Pages (from-to)	381-386
Number of pages	6
Journal	Journal of Luminescence
Volume	80
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-2313(98)00133-1
Publication status	Published - Dec 1998

Keywords

Erbium
LED
Rare earth
Silicon-germanium

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10.1016/S0022-2313(98)00133-1

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@article{858178ecbf0d439da63d37b9f49b695e,

title = "Erbium in silicon-germanium quantum wells",

abstract = "Strained Si1-xGex/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si1-xGex/Si quantum wells and relaxed Si1-xGex, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1x1018 and 5x1018 cm-3 throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si1-xGex/Si layers, but erbium-implanted samples containing Si1-xGex exhibit defect luminescence in the region of 0.9-1.0 eV. These defects are also present when Si1-xGex/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si0.87Ge0.13/Si structure at a drive current density of only 1.8 mA/cm2.",

keywords = "Erbium, LED, Rare earth, Silicon-germanium",

author = "Naveed, {A. T.} and Huda, {M. Q.} and {Abd El-Rahman}, {K. F.} and J. Hartung and Evans-Freeman, {J. H.} and Peaker, {A. R.} and Houghton, {D. C.} and C. Jeynes and Gillin, {W. P.}",

year = "1998",

month = dec,

doi = "10.1016/S0022-2313(98)00133-1",

language = "English",

volume = "80",

pages = "381--386",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier BV",

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T1 - Erbium in silicon-germanium quantum wells

AU - Naveed, A. T.

AU - Huda, M. Q.

AU - Abd El-Rahman, K. F.

AU - Hartung, J.

AU - Evans-Freeman, J. H.

AU - Peaker, A. R.

AU - Houghton, D. C.

AU - Jeynes, C.

AU - Gillin, W. P.

PY - 1998/12

Y1 - 1998/12

N2 - Strained Si1-xGex/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si1-xGex/Si quantum wells and relaxed Si1-xGex, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1x1018 and 5x1018 cm-3 throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si1-xGex/Si layers, but erbium-implanted samples containing Si1-xGex exhibit defect luminescence in the region of 0.9-1.0 eV. These defects are also present when Si1-xGex/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si0.87Ge0.13/Si structure at a drive current density of only 1.8 mA/cm2.

AB - Strained Si1-xGex/Si quantum wells have been doped with erbium by implantation. A comparison is made with strained Si1-xGex/Si quantum wells and relaxed Si1-xGex, with x between 10% and 25%, doped with erbium during MBE growth. The erbium concentration was between 1x1018 and 5x1018 cm-3 throughout the active regions. Transmission electron microscopy, X-ray diffraction, and photoluminescence studies indicate that good regrowth can been achieved after full amorphisation by implantation of the strained quantum wells. The erbium luminescence is more intense in the Si1-xGex/Si layers, but erbium-implanted samples containing Si1-xGex exhibit defect luminescence in the region of 0.9-1.0 eV. These defects are also present when Si1-xGex/Si quantum wells are implanted with an amorphising dose of silicon, and then regrown. They are attributed to small germanium-rich platelets, rather than to erbium-related defects. Electroluminescence is presented from a forward biased erbium-implanted Si0.87Ge0.13/Si structure at a drive current density of only 1.8 mA/cm2.

KW - Erbium

KW - LED

KW - Rare earth

KW - Silicon-germanium

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U2 - 10.1016/S0022-2313(98)00133-1

DO - 10.1016/S0022-2313(98)00133-1

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SN - 0022-2313

VL - 80

SP - 381

EP - 386

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-4

ER -

Erbium in silicon-germanium quantum wells

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Keywords

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