Erratum: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6)

Azzouz Sellai; Piotr Kruszewski; Abdelmadjid Mesli; Anthony R. Peaker; Mohamed Missous

doi:10.1117/1.JNP.6.060103

Erratum: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6)

Azzouz Sellai^*, Piotr Kruszewski, Abdelmadjid Mesli, Anthony R. Peaker, Mohamed Missous

^*Corresponding author for this work

Research output: Contribution to journal › Commentary/debate › peer-review

Original language	English
Article number	060103
Journal	Journal of Nanophotonics
Volume	6
Issue number	1
DOIs	https://doi.org/10.1117/1.JNP.6.060103
Publication status	Published - 27 Jul 2012

Research Beacons, Institutes and Platforms

Photon Science Institute

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10.1117/1.JNP.6.060103

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AU - Peaker, Anthony R.

AU - Missous, Mohamed

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Erratum: Electrical characteristics of InAs self-assembled quantum dots embedded in GaAs using admittance spectroscopy (Journal of Nanophotonics (2012) 6)

Research Beacons, Institutes and Platforms

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