Abstract
We investigate the theoretical error rates in deterministic ion implantation, when using an ion beam governed by a Poisson point process with a detector that counts the impacts. We conclude that if the error rates are small, then for spots with nominally one implanted ion the probability of failure to implant the correct number is approximately κ/λ + η(bar) + λ/2 for a synchronous (i.e. pulsed) system or K/L + η(bar) + Lts for an asynchronous (i.e. continuous beam) system, where η(bar) is the probability that the detector misses an ion impact, and L(K) and λ(κ) are the numbers of ions (dark counts) per unit time and per pulse respectively. ts is the system reaction time for an asynchronous system. This approximation allows easy identification of the greatest need for engineering effort. We examine some experimental efforts to measure these parameters and their uncertainties.
Original language | English |
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Article number | 2000615 |
Journal | Physica status solidi B-basic solid state physics |
Volume | 258 |
Issue number | 6 |
Early online date | 2 Mar 2021 |
DOIs | |
Publication status | Published - 1 Jun 2021 |
Keywords
- errors
- ion implantation
- single ions