European Microwave Week Conference 2006

Ali Rezazadeh

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    The effect of various biasing conditions and temperature on third order two-tone Intermodulation Distortion characteristics of InGaP/GaAs microwave DHBTs is studied. The experimental results indicated that the variations in the third order nonlinearity characteristic dip are mainly due to changes in the DC current gain of the device at a fixed and relatively low collector current. Changes in the AC power gain (with bias and temperature) only become important at higher collector currents. These variations in the dip of the third order nonlinearity are used to calculate thermal resistance at low power optimal operating point of the dip. The results are compared with other methods of extracting thermal resistance from DC characteristics. This analysis has been reported for the first time and is important in understanding the non-linear characteristics of microwave device.
    Original languageEnglish
    Title of host publicationhost publication
    Place of PublicationInstitution of Electrical and Electronic Engineeerng (IEEE)
    PublisherIEEE
    Number of pages4
    Publication statusPublished - 9 Sep 2006
    EventEuropean Microwave Integrated Circuit Confernece 2006 - Manchester, UK
    Duration: 10 Sep 200615 Sep 2006

    Conference

    ConferenceEuropean Microwave Integrated Circuit Confernece 2006
    CityManchester, UK
    Period10/09/0615/09/06

    Keywords

    • two-tone intermodulation
    • InGaP/GaAS HBTs
    • non-linearity
    • third order two-tone

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