Evaluation of BBr2 + and B+ + Br + implants in silicon

J. A. Sharp*, R. M. Gwilliam, B. J. Sealy, C. Jeynes, J. J. Hamilton, K. J. Kirkby

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    The work carried out here examines the suitability of BBr2 + and B+ + Br+ implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr2 +, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr2 + and B+ + Br+ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.

    Original languageEnglish
    Pages (from-to)196-199
    Number of pages4
    JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
    Volume124-125
    Issue numberSUPPL.
    DOIs
    Publication statusPublished - 5 Dec 2005

    Keywords

    • Boron
    • Hall Effect
    • Rutherford backscattering spectroscopy
    • Silicon

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