Abstract
The work carried out here examines the suitability of BBr2 + and B+ + Br+ implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr2 +, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr2 + and B+ + Br+ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.
Original language | English |
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Pages (from-to) | 196-199 |
Number of pages | 4 |
Journal | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
Volume | 124-125 |
Issue number | SUPPL. |
DOIs | |
Publication status | Published - 5 Dec 2005 |
Keywords
- Boron
- Hall Effect
- Rutherford backscattering spectroscopy
- Silicon