Evaluation of BBr2
+ and B+ + Br + implants in silicon

J. A. Sharp; R. M. Gwilliam; B. J. Sealy; C. Jeynes; J. J. Hamilton; K. J. Kirkby

doi:10.1016/j.mseb.2005.08.065

Evaluation of BBr2 + and B+ + Br + implants in silicon

J. A. Sharp^*
, R. M. Gwilliam
, B. J. Sealy
, C. Jeynes
, J. J. Hamilton
, K. J. Kirkby

^*Corresponding author for this work

Surrey Ion Beam Centre
University of Surrey

Research output: Contribution to journal › Article › peer-review

Abstract

The work carried out here examines the suitability of BBr₂ ⁺ and B⁺ + Br⁺ implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr₂ ⁺, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr₂ ⁺ and B⁺ + Br⁺ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.

Original language	English
Pages (from-to)	196-199
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	124-125
Issue number	SUPPL.
DOIs	https://doi.org/10.1016/j.mseb.2005.08.065
Publication status	Published - 5 Dec 2005

Keywords

Boron
Hall Effect
Rutherford backscattering spectroscopy
Silicon

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10.1016/j.mseb.2005.08.065

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title = "Evaluation of BBr2 + and B+ + Br + implants in silicon",

abstract = "The work carried out here examines the suitability of BBr2 + and B+ + Br+ implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr2 +, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr2 + and B+ + Br+ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.",

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doi = "10.1016/j.mseb.2005.08.065",

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TY - JOUR

T1 - Evaluation of BBr2 + and B+ + Br + implants in silicon

AU - Sharp, J. A.

AU - Gwilliam, R. M.

AU - Sealy, B. J.

AU - Jeynes, C.

AU - Hamilton, J. J.

AU - Kirkby, K. J.

PY - 2005/12/5

Y1 - 2005/12/5

N2 - The work carried out here examines the suitability of BBr2 + and B+ + Br+ implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr2 +, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr2 + and B+ + Br+ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.

AB - The work carried out here examines the suitability of BBr2 + and B+ + Br+ implants into crystalline (1 0 0) silicon for ultra-shallow junctions (USJ) applications. Rutherford backscattering spectroscopy (RBS) shows that an amorphous region is created during implantation of BBr2 +, eliminating the need for a separate pre-amorphising implant. This amorphous region re-grows during subsequent rapid thermal annealing and there is evidence that bromine retards the re-growth velocity. Hall Effect measurements after rapid thermal annealing show a difference in electrical activation between the BBr2 + and B+ + Br+ implants with the latter having the lower activation. Anomalous Hall mobility is also observed for the molecular implant at lower annealing temperatures.

KW - Boron

KW - Hall Effect

KW - Rutherford backscattering spectroscopy

KW - Silicon

UR - https://www.scopus.com/pages/publications/27844493666

U2 - 10.1016/j.mseb.2005.08.065

DO - 10.1016/j.mseb.2005.08.065

M3 - Article

AN - SCOPUS:27844493666

SN - 0921-5107

VL - 124-125

SP - 196

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JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - SUPPL.

ER -

Evaluation of BBr2 + and B+ + Br + implants in silicon

Abstract

Keywords

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