Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE

F. Oehler, D. Sutherland, T. Zhu, R. Emery, T. J. Badcock, M. J. Kappers, C. J. Humphreys, P. Dawson, R. A. Oliver

    Research output: Contribution to journalArticlepeer-review

    Original languageEnglish
    Pages (from-to)32-41
    Number of pages9
    JournalJOURNAL OF CRYSTAL GROWTH
    Volume408
    DOIs
    Publication statusPublished - 2014

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