Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE

F. Oehler; D. Sutherland; T. Zhu; R. Emery; T. J. Badcock; M. J. Kappers; C. J. Humphreys; P. Dawson; R. A. Oliver

doi:10.1016/j.jcrysgro.2014.09.009

Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE

F. Oehler, D. Sutherland, T. Zhu, R. Emery, T. J. Badcock, M. J. Kappers, C. J. Humphreys, P. Dawson, R. A. Oliver

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	32-41
Number of pages	9
Journal	JOURNAL OF CRYSTAL GROWTH
Volume	408
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.09.009
Publication status	Published - 2014

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10.1016/j.jcrysgro.2014.09.009

Cite this

@article{c7ad0469ee0e420183478e533bee6704,

title = "Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE",

author = "F. Oehler and D. Sutherland and T. Zhu and R. Emery and Badcock, {T. J.} and Kappers, {M. J.} and Humphreys, {C. J.} and P. Dawson and Oliver, {R. A.}",

year = "2014",

doi = "10.1016/j.jcrysgro.2014.09.009",

language = "English",

volume = "408",

pages = "32--41",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE

AU - Oehler, F.

AU - Sutherland, D.

AU - Zhu, T.

AU - Emery, R.

AU - Badcock, T. J.

AU - Kappers, M. J.

AU - Humphreys, C. J.

AU - Dawson, P.

AU - Oliver, R. A.

PY - 2014

Y1 - 2014

U2 - 10.1016/j.jcrysgro.2014.09.009

DO - 10.1016/j.jcrysgro.2014.09.009

M3 - Article

VL - 408

SP - 32

EP - 41

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -