Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE

F. Oehler; D. Sutherland; T. Zhu; R. Emery; T. J. Badcock; M. J. Kappers; C. J. Humphreys; P. Dawson; R. A. Oliver

doi:10.1016/j.jcrysgro.2014.09.009

Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE

F. Oehler
, D. Sutherland
, T. Zhu
, R. Emery
, T. J. Badcock
, M. J. Kappers
, C. J. Humphreys
, P. Dawson
, R. A. Oliver

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	32-41
Number of pages	9
Journal	JOURNAL OF CRYSTAL GROWTH
Volume	408
DOIs	https://doi.org/10.1016/j.jcrysgro.2014.09.009
Publication status	Published - 2014

Access to Document

10.1016/j.jcrysgro.2014.09.009

Cite this

@article{c7ad0469ee0e420183478e533bee6704,

title = "Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE",

author = "F. Oehler and D. Sutherland and T. Zhu and R. Emery and Badcock, \{T. J.\} and Kappers, \{M. J.\} and Humphreys, \{C. J.\} and P. Dawson and Oliver, \{R. A.\}",

year = "2014",

doi = "10.1016/j.jcrysgro.2014.09.009",

language = "English",

volume = "408",

pages = "32--41",

journal = "JOURNAL OF CRYSTAL GROWTH",

issn = "0022-0248",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Evaluation of growth methods for the heteroepitaxy of non-polar (1120) GaN on sapphire by MOVPE

AU - Oehler, F.

AU - Sutherland, D.

AU - Zhu, T.

AU - Emery, R.

AU - Badcock, T. J.

AU - Kappers, M. J.

AU - Humphreys, C. J.

AU - Dawson, P.

AU - Oliver, R. A.

PY - 2014

Y1 - 2014

U2 - 10.1016/j.jcrysgro.2014.09.009

DO - 10.1016/j.jcrysgro.2014.09.009

M3 - Article

SN - 0022-0248

VL - 408

SP - 32

EP - 41

JO - JOURNAL OF CRYSTAL GROWTH

JF - JOURNAL OF CRYSTAL GROWTH

ER -