Evaluation of the boron activation and depth distribution using BBr2 + implants

S. H. Winston, R. M. Gwilliam, B. J. Sealy, G. Boudreault, C. Jeynes, R. P. Webb, K. J. Kirkby

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultra shallow junctions (junction depths typically 20 - 80 nm) for future generations of advanced silicon devices require either very low energy ion implantation (+, BF2 + and BBr2 + implants. Boron was implanted with a fluence of 2 × 1014 B+ cm-2 at an energy of 5 keV using either 5 keV B+, 21.5 keV BF2 + or 75 keV BBr2 +. Subsequent to implantation the samples were annealed at temperatures in the range 800-1100°C for times of between 5 and 100 seconds. The samples were analysed before and after annealing using Rutherford backscattering spectrometry (RBS) and Hall effect measurements. Molecular Dynamics simulations were also undertaken and compared with the experimental data. The experimental measurements indicate that the highest electrical activation of the B is observed for the BF2 + implants. Above 1000°C the damage introduced during the implantation of BBr2 + has largely been removed and the observed boron activation is higher than that for the B+ implant, although still slightly lower than that for the BF+ 2 implant. Molecular dynamics simulations show that the damage introduced scales with the mass of the halide, following classic Kinchen Pease theory. The bromine distribution does not appear to change significantly during annealing.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages115-118
Number of pages4
Volume22-27-September-2002
ISBN (Print)0780371550
DOIs
Publication statusPublished - 2002
Event2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 - Taos, United States
Duration: 22 Sept 200227 Sept 2002

Conference

Conference2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
Country/TerritoryUnited States
CityTaos
Period22/09/0227/09/02

Keywords

  • B
  • BBr electrical activation
  • BF
  • boron
  • silicon

Fingerprint

Dive into the research topics of 'Evaluation of the boron activation and depth distribution using BBr2 + implants'. Together they form a unique fingerprint.

Cite this