Evidence for an iron-hydrogen complex in p-type silicon

S. Leonard, V. P. Markevich, A. R. Peaker, B. Hamilton, J. D. Murphy

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    Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120°C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2×10-17cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125°C.

    Original languageEnglish
    Article number032103
    JournalApplied Physics Letters
    Issue number3
    Publication statusPublished - 20 Jul 2015

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