Evidence for an iron-hydrogen complex in p-type silicon

S. Leonard; V. P. Markevich; A. R. Peaker; B. Hamilton; J. D. Murphy

doi:10.1063/1.4927323

Evidence for an iron-hydrogen complex in p-type silicon

S. Leonard^*, V. P. Markevich, A. R. Peaker, B. Hamilton, J. D. Murphy

^*Corresponding author for this work

The University of Warwick

Research output: Contribution to journal › Article › peer-review

Abstract

Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120°C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at E_v + 0.31eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2×10^-17cm². It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125°C.

Original language	English
Article number	032103
Journal	Applied Physics Letters
Volume	107
Issue number	3
DOIs	https://doi.org/10.1063/1.4927323
Publication status	Published - 20 Jul 2015

Research Beacons, Institutes and Platforms

Photon Science Institute

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1063/1.4927323

Cite this

@article{d67e1ad6afd047e7951df73b249ad811,

title = "Evidence for an iron-hydrogen complex in p-type silicon",

abstract = "Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120°C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2×10-17cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125°C.",

author = "S. Leonard and Markevich, \{V. P.\} and Peaker, \{A. R.\} and B. Hamilton and Murphy, \{J. D.\}",

year = "2015",

month = jul,

day = "20",

doi = "10.1063/1.4927323",

language = "English",

volume = "107",

journal = "Applied Physics Letters",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Evidence for an iron-hydrogen complex in p-type silicon

AU - Leonard, S.

AU - Markevich, V. P.

AU - Peaker, A. R.

AU - Hamilton, B.

AU - Murphy, J. D.

PY - 2015/7/20

Y1 - 2015/7/20

N2 - Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120°C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2×10-17cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125°C.

AB - Interactions of hydrogen with iron have been studied in Fe contaminated p-type Czochralski silicon using capacitance-voltage profiling and deep level transient spectroscopy (DLTS). Hydrogen has been introduced into the samples from a silicon nitride layer grown by plasma enhanced chemical vapor deposition. After annealing of the Schottky diodes on Si:Fe + H samples under reverse bias in the temperature range of 90-120°C, a trap has been observed in the DLTS spectra which we have assigned to a Fe-H complex. The trap is only observed when a high concentration of hydrogen is present in the near surface region. The trap concentration is higher in samples with a higher concentration of single interstitial Fe atoms. The defect has a deep donor level at Ev + 0.31eV. Direct measurements of capture cross section of holes have shown that the capture cross section is not temperature dependent and its value is 5.2×10-17cm2. It is found from an isochronal annealing study that the Fe-H complex is not very stable and can be eliminated completely by annealing for 30 min at 125°C.

UR - https://www.scopus.com/pages/publications/84937775977

U2 - 10.1063/1.4927323

DO - 10.1063/1.4927323

M3 - Article

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032103

ER -

Evidence for an iron-hydrogen complex in p-type silicon

Abstract

Research Beacons, Institutes and Platforms

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this