Evidence for spin memory in the electron phase coherence in graphene

A. A. Kozikov; D. W. Horsell; E. McCann; V. I. Fal'Ko

doi:10.1103/PhysRevB.86.045436

Evidence for spin memory in the electron phase coherence in graphene

A. A. Kozikov^*, D. W. Horsell, E. McCann, V. I. Fal'Ko

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

Original language	English
Article number	045436
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	86
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.86.045436
Publication status	Published - 23 Jul 2012

Research Beacons, Institutes and Platforms

National Graphene Institute

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10.1103/PhysRevB.86.045436

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abstract = "We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.",

author = "Kozikov, {A. A.} and Horsell, {D. W.} and E. McCann and Fal'Ko, {V. I.}",

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AU - Kozikov, A. A.

AU - Horsell, D. W.

AU - McCann, E.

AU - Fal'Ko, V. I.

PY - 2012/7/23

Y1 - 2012/7/23

N2 - We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

AB - We measure the dependence of the conductivity of graphene as a function of magnetic field, temperature, and carrier density and discover a saturation of the dephasing length at low temperatures that we ascribe to spin memory effects. Values of the spin coherence length up to eight microns are found to scale with the mean free path. We consider different origins of this effect and suggest that it is controlled by resonant states that act as magneticlike defects. By varying the level of disorder, we demonstrate that the spin coherence length can be tuned over an order of magnitude.

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DO - 10.1103/PhysRevB.86.045436

M3 - Article

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ER -

Evidence for spin memory in the electron phase coherence in graphene

Abstract

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