Ex situ re-calibration method for low-cost precision epitaxial growth of heterostructure devices

R. K. Hayden, A. E. Gunnaes, M. Missous, R. Khan, M. J. Kelly, M. J. Goringe

Research output: Contribution to journalArticlepeer-review

Abstract

A simple method for high-precision epitaxial semiconductor growth, using ex situ materials analysis for frequent re-calibration, has been developed. The method is shown to allow reproducible growth of material for use in low-cost commercial heterostructure devices. Even tunnel devices, with their extreme sensitivity to growth parameters, show little variation in the electrical characteristics from wafers grown several months apart.

Original languageEnglish
Pages (from-to)135-140
Number of pages6
JournalSemiconductor Science and Technology
Volume17
Issue number2
DOIs
Publication statusPublished - 1 Feb 2002

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