Ex situ re-calibration method for low-cost precision epitaxial growth of heterostructure devices

R. K. Hayden; A. E. Gunnaes; M. Missous; R. Khan; M. J. Kelly; M. J. Goringe

doi:10.1088/0268-1242/17/2/308

Ex situ re-calibration method for low-cost precision epitaxial growth of heterostructure devices

R. K. Hayden, A. E. Gunnaes, M. Missous, R. Khan, M. J. Kelly^*, M. J. Goringe

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A simple method for high-precision epitaxial semiconductor growth, using ex situ materials analysis for frequent re-calibration, has been developed. The method is shown to allow reproducible growth of material for use in low-cost commercial heterostructure devices. Even tunnel devices, with their extreme sensitivity to growth parameters, show little variation in the electrical characteristics from wafers grown several months apart.

Original language	English
Pages (from-to)	135-140
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	17
Issue number	2
DOIs	https://doi.org/10.1088/0268-1242/17/2/308
Publication status	Published - 1 Feb 2002

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abstract = "A simple method for high-precision epitaxial semiconductor growth, using ex situ materials analysis for frequent re-calibration, has been developed. The method is shown to allow reproducible growth of material for use in low-cost commercial heterostructure devices. Even tunnel devices, with their extreme sensitivity to growth parameters, show little variation in the electrical characteristics from wafers grown several months apart.",

author = "Hayden, {R. K.} and Gunnaes, {A. E.} and M. Missous and R. Khan and Kelly, {M. J.} and Goringe, {M. J.}",

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AU - Gunnaes, A. E.

AU - Missous, M.

AU - Khan, R.

AU - Kelly, M. J.

AU - Goringe, M. J.

PY - 2002/2/1

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N2 - A simple method for high-precision epitaxial semiconductor growth, using ex situ materials analysis for frequent re-calibration, has been developed. The method is shown to allow reproducible growth of material for use in low-cost commercial heterostructure devices. Even tunnel devices, with their extreme sensitivity to growth parameters, show little variation in the electrical characteristics from wafers grown several months apart.

AB - A simple method for high-precision epitaxial semiconductor growth, using ex situ materials analysis for frequent re-calibration, has been developed. The method is shown to allow reproducible growth of material for use in low-cost commercial heterostructure devices. Even tunnel devices, with their extreme sensitivity to growth parameters, show little variation in the electrical characteristics from wafers grown several months apart.

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Ex situ re-calibration method for low-cost precision epitaxial growth of heterostructure devices

Abstract

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