Exchange splitting and spin disorder scattering in TmAs

L. B. Rigal*, D. K. Maude, J. C. Portal, M. Bennett, K. E. Singer, A. R. Peaker, G. Hill, M. A. Pate

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Magneto-transport measurements have been used to investigate the band structure and crystal-field splitting of a thin TmAs epitaxial layer buried in GaAs. From the Fourier transform of the Shubnikov-de Haas oscillations we estimate an exchange energy of 21 ± 2 meV for the interaction between conduction electrons and the electrons in the 4f shell of Thulium. Using first-order scattering theory for the crystal-field splitting and the electron-phonon interaction a Debye temperature of 238 ± 15 K and the crystal-field splitting of the groundstate of 27 ± 3 K and 71 ± 7 K for the 1st and 2nd excited states are determined from the temperature dependence of the resistance.

Original languageEnglish
Pages (from-to)373-377
Number of pages5
JournalSolid State Communications
Volume106
Issue number6
DOIs
Publication statusPublished - May 1998

Keywords

  • A. magnetic films and multilayers
  • D. electronic transport
  • D. exchange and superexchange

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