Exciton localization in InGaN/GaN single quantum well structures

D. M. Graham; A. Soltani Vala; P. Dawson; M. J. Godfrey; M. J. Kappers; T. M. Smeeton; J. S. Barnard; C. J. Humphreys; E. J. Thrush

doi:10.1002/pssb.200303338

Exciton localization in InGaN/GaN single quantum well structures

D. M. Graham, A. Soltani Vala, P. Dawson, M. J. Godfrey, M. J. Kappers, T. M. Smeeton, J. S. Barnard, C. J. Humphreys, E. J. Thrush

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Abstract

We have performed a detailed investigation of the low temperature (T = 6 K) photoluminescence spectra and recombination lifetimes of localized excitons in a set of InGaN/GaN single quantum wells in which the indium fraction in the quantum well was varied. We found that with increasing indium fraction the photoluminescence peak emission moved to lower energy and the intensities of the phonon replicas relative to the zero-phonon line increased. From a multi-Gaussian fit of the experimental data, we extracted the Huang-Rhys factor (S), a measure of the strength of the exciton coupling with LO-phonons. By comparing experimental S factors with the results of a theoretical model, we found that the excitons localize on a length scale of ∼2 nm in our samples. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	344-347
Number of pages	3
Journal	Physica Status Solidi (B) Basic Research
Volume	240
Issue number	2
DOIs	https://doi.org/10.1002/pssb.200303338
Publication status	Published - Nov 2003

Keywords

Exciton (exciton localization in gallium indium nitride/gallium nitride single quantum well); Exciton luminescence; LO phonon; Radiative recombination (of gallium indium nitride/gallium nitride single quantum well)

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10.1002/pssb.200303338

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@article{ec0cc9bea62e4a2c963d3d341dd4b306,

title = "Exciton localization in InGaN/GaN single quantum well structures",

abstract = "We have performed a detailed investigation of the low temperature (T = 6 K) photoluminescence spectra and recombination lifetimes of localized excitons in a set of InGaN/GaN single quantum wells in which the indium fraction in the quantum well was varied. We found that with increasing indium fraction the photoluminescence peak emission moved to lower energy and the intensities of the phonon replicas relative to the zero-phonon line increased. From a multi-Gaussian fit of the experimental data, we extracted the Huang-Rhys factor (S), a measure of the strength of the exciton coupling with LO-phonons. By comparing experimental S factors with the results of a theoretical model, we found that the excitons localize on a length scale of ∼2 nm in our samples. {\textcopyright} 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

keywords = "Exciton (exciton localization in gallium indium nitride/gallium nitride single quantum well); Exciton luminescence; LO phonon; Radiative recombination (of gallium indium nitride/gallium nitride single quantum well)",

author = "Graham, {D. M.} and {Soltani Vala}, A. and P. Dawson and Godfrey, {M. J.} and Kappers, {M. J.} and Smeeton, {T. M.} and Barnard, {J. S.} and Humphreys, {C. J.} and Thrush, {E. J.}",

year = "2003",

month = nov,

doi = "10.1002/pssb.200303338",

language = "English",

volume = "240",

pages = "344--347",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "John Wiley & Sons Ltd",

number = "2",

}

TY - JOUR

T1 - Exciton localization in InGaN/GaN single quantum well structures

AU - Graham, D. M.

AU - Soltani Vala, A.

AU - Dawson, P.

AU - Godfrey, M. J.

AU - Kappers, M. J.

AU - Smeeton, T. M.

AU - Barnard, J. S.

AU - Humphreys, C. J.

AU - Thrush, E. J.

PY - 2003/11

Y1 - 2003/11

N2 - We have performed a detailed investigation of the low temperature (T = 6 K) photoluminescence spectra and recombination lifetimes of localized excitons in a set of InGaN/GaN single quantum wells in which the indium fraction in the quantum well was varied. We found that with increasing indium fraction the photoluminescence peak emission moved to lower energy and the intensities of the phonon replicas relative to the zero-phonon line increased. From a multi-Gaussian fit of the experimental data, we extracted the Huang-Rhys factor (S), a measure of the strength of the exciton coupling with LO-phonons. By comparing experimental S factors with the results of a theoretical model, we found that the excitons localize on a length scale of ∼2 nm in our samples. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - We have performed a detailed investigation of the low temperature (T = 6 K) photoluminescence spectra and recombination lifetimes of localized excitons in a set of InGaN/GaN single quantum wells in which the indium fraction in the quantum well was varied. We found that with increasing indium fraction the photoluminescence peak emission moved to lower energy and the intensities of the phonon replicas relative to the zero-phonon line increased. From a multi-Gaussian fit of the experimental data, we extracted the Huang-Rhys factor (S), a measure of the strength of the exciton coupling with LO-phonons. By comparing experimental S factors with the results of a theoretical model, we found that the excitons localize on a length scale of ∼2 nm in our samples. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - Exciton (exciton localization in gallium indium nitride/gallium nitride single quantum well); Exciton luminescence; LO phonon; Radiative recombination (of gallium indium nitride/gallium nitride single quantum well)

U2 - 10.1002/pssb.200303338

DO - 10.1002/pssb.200303338

M3 - Article

SN - 0370-1972

VL - 240

SP - 344

EP - 347

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 2

ER -

Exciton localization in InGaN/GaN single quantum well structures

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Keywords

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