Exciton localization in InGaN/GaN single quantum well structures

D. M. Graham, A. Soltani Vala, P. Dawson, M. J. Godfrey, M. J. Kappers, T. M. Smeeton, J. S. Barnard, C. J. Humphreys, E. J. Thrush

    Research output: Contribution to journalArticlepeer-review


    We have performed a detailed investigation of the low temperature (T = 6 K) photoluminescence spectra and recombination lifetimes of localized excitons in a set of InGaN/GaN single quantum wells in which the indium fraction in the quantum well was varied. We found that with increasing indium fraction the photoluminescence peak emission moved to lower energy and the intensities of the phonon replicas relative to the zero-phonon line increased. From a multi-Gaussian fit of the experimental data, we extracted the Huang-Rhys factor (S), a measure of the strength of the exciton coupling with LO-phonons. By comparing experimental S factors with the results of a theoretical model, we found that the excitons localize on a length scale of ∼2 nm in our samples. © 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
    Original languageEnglish
    Pages (from-to)344-347
    Number of pages3
    JournalPhysica Status Solidi (B) Basic Research
    Issue number2
    Publication statusPublished - Nov 2003


    • Exciton (exciton localization in gallium indium nitride/gallium nitride single quantum well); Exciton luminescence; LO phonon; Radiative recombination (of gallium indium nitride/gallium nitride single quantum well)


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