Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach

J. Kundrotas; A. Čerškus; S. Ašmontas; G. Valušis; B. Sherliker; M. P. Halsall; M. J. Steer; E. Johannessen; P. Harrison

doi:10.1103/PhysRevB.72.235322

Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach

J. Kundrotas, A. Čerškus, S. Ašmontas, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, E. Johannessen, P. Harrison

Research output: Contribution to journal › Article › peer-review

Abstract

We have investigated the optical transitions in Be δ-doped GaAsAlAs multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron-acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated. © 2005 The American Physical Society.

Original language	English
Article number	235322
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	72
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.72.235322
Publication status	Published - 15 Dec 2005

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Kundrotas, J., Čerškus, A., Ašmontas, S., Valušis, G., Sherliker, B., Halsall, M. P., Steer, M. J., Johannessen, E., & Harrison, P. (2005). Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach. Physical Review B - Condensed Matter and Materials Physics, 72(23), Article 235322. https://doi.org/10.1103/PhysRevB.72.235322

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title = "Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach",

abstract = "We have investigated the optical transitions in Be δ-doped GaAsAlAs multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron-acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated. {\textcopyright} 2005 The American Physical Society.",

author = "J. Kundrotas and A. {\v C}er{\v s}kus and S. A{\v s}montas and G. Valu{\v s}is and B. Sherliker and Halsall, {M. P.} and Steer, {M. J.} and E. Johannessen and P. Harrison",

year = "2005",

month = dec,

day = "15",

doi = "10.1103/PhysRevB.72.235322",

language = "English",

volume = "72",

journal = "Physical Review B - Condensed Matter and Materials Physics",

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Kundrotas, J, Čerškus, A, Ašmontas, S, Valušis, G, Sherliker, B, Halsall, MP, Steer, MJ, Johannessen, E & Harrison, P 2005, 'Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach', Physical Review B - Condensed Matter and Materials Physics, vol. 72, no. 23, 235322. https://doi.org/10.1103/PhysRevB.72.235322

TY - JOUR

T1 - Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach

AU - Kundrotas, J.

AU - Čerškus, A.

AU - Ašmontas, S.

AU - Valušis, G.

AU - Sherliker, B.

AU - Halsall, M. P.

AU - Steer, M. J.

AU - Johannessen, E.

AU - Harrison, P.

PY - 2005/12/15

Y1 - 2005/12/15

N2 - We have investigated the optical transitions in Be δ-doped GaAsAlAs multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron-acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated. © 2005 The American Physical Society.

AB - We have investigated the optical transitions in Be δ-doped GaAsAlAs multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron-acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated. © 2005 The American Physical Society.

U2 - 10.1103/PhysRevB.72.235322

DO - 10.1103/PhysRevB.72.235322

M3 - Article

SN - 1098-0121

VL - 72

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

M1 - 235322

ER -

Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach

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