Explicit empirical model for photovoltaic devices. Experimental validation

A. Massi Pavan; S. Vergura; A. Mellit; V. Lughi

doi:10.1016/j.solener.2017.07.002

Explicit empirical model for photovoltaic devices. Experimental validation

A. Massi Pavan^*, S. Vergura, A. Mellit, V. Lughi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

A comparison between the experimental current-voltage (I-V) and power-voltage (P-V) characteristics of PhotoVoltaic (PV) modules, and the prediction of an explicit empirical model has been carried out. The model consists of an explicit expression for the current as a function of the voltage; the only inputs are the parameters that are always directly available in the manufacturer's datasheet. The comparison was carried out on four representative PV technologies, based on polycrystalline Si, Heterojunction with Intrinsic Thin layer (HIT), Copper Indium Gallium Selenide (CIGS), and Cadmium Telluride (CdTe). The comparison reveals that the model replicates the experimental I-V and P-V curves to a very good degree of accuracy for the considered operating conditions and PV technologies. This validation sets a turning point in PV modelling, as it enables a reliable use of this accessible model.

Original language	English
Pages (from-to)	647-653
Number of pages	7
Journal	Solar Energy
Volume	155
Early online date	8 Jul 2017
DOIs	https://doi.org/10.1016/j.solener.2017.07.002
Publication status	Published - 2017

Keywords

CdTe
CIGS
HIT
I-V and P-V characteristics

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solener.2017.07.002

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title = "Explicit empirical model for photovoltaic devices. Experimental validation",

abstract = "A comparison between the experimental current-voltage (I-V) and power-voltage (P-V) characteristics of PhotoVoltaic (PV) modules, and the prediction of an explicit empirical model has been carried out. The model consists of an explicit expression for the current as a function of the voltage; the only inputs are the parameters that are always directly available in the manufacturer's datasheet. The comparison was carried out on four representative PV technologies, based on polycrystalline Si, Heterojunction with Intrinsic Thin layer (HIT), Copper Indium Gallium Selenide (CIGS), and Cadmium Telluride (CdTe). The comparison reveals that the model replicates the experimental I-V and P-V curves to a very good degree of accuracy for the considered operating conditions and PV technologies. This validation sets a turning point in PV modelling, as it enables a reliable use of this accessible model.",

keywords = "CdTe, CIGS, HIT, I-V and P-V characteristics",

author = "{Massi Pavan}, A. and S. Vergura and A. Mellit and V. Lughi",

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journal = "Solar Energy",

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T1 - Explicit empirical model for photovoltaic devices. Experimental validation

AU - Massi Pavan, A.

AU - Vergura, S.

AU - Mellit, A.

AU - Lughi, V.

PY - 2017

Y1 - 2017

N2 - A comparison between the experimental current-voltage (I-V) and power-voltage (P-V) characteristics of PhotoVoltaic (PV) modules, and the prediction of an explicit empirical model has been carried out. The model consists of an explicit expression for the current as a function of the voltage; the only inputs are the parameters that are always directly available in the manufacturer's datasheet. The comparison was carried out on four representative PV technologies, based on polycrystalline Si, Heterojunction with Intrinsic Thin layer (HIT), Copper Indium Gallium Selenide (CIGS), and Cadmium Telluride (CdTe). The comparison reveals that the model replicates the experimental I-V and P-V curves to a very good degree of accuracy for the considered operating conditions and PV technologies. This validation sets a turning point in PV modelling, as it enables a reliable use of this accessible model.

AB - A comparison between the experimental current-voltage (I-V) and power-voltage (P-V) characteristics of PhotoVoltaic (PV) modules, and the prediction of an explicit empirical model has been carried out. The model consists of an explicit expression for the current as a function of the voltage; the only inputs are the parameters that are always directly available in the manufacturer's datasheet. The comparison was carried out on four representative PV technologies, based on polycrystalline Si, Heterojunction with Intrinsic Thin layer (HIT), Copper Indium Gallium Selenide (CIGS), and Cadmium Telluride (CdTe). The comparison reveals that the model replicates the experimental I-V and P-V curves to a very good degree of accuracy for the considered operating conditions and PV technologies. This validation sets a turning point in PV modelling, as it enables a reliable use of this accessible model.

KW - CdTe

KW - CIGS

KW - HIT

KW - I-V and P-V characteristics

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U2 - 10.1016/j.solener.2017.07.002

DO - 10.1016/j.solener.2017.07.002

M3 - Article

AN - SCOPUS:85022030918

SN - 0038-092X

VL - 155

SP - 647

EP - 653

JO - Solar Energy

JF - Solar Energy

ER -

Explicit empirical model for photovoltaic devices. Experimental validation

Abstract

Keywords

UN SDGs

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