Explicit empirical model for photovoltaic devices. Experimental validation

A. Massi Pavan, S. Vergura, A. Mellit, V. Lughi

    Research output: Contribution to journalArticlepeer-review

    Abstract

    A comparison between the experimental current-voltage (I-V) and power-voltage (P-V) characteristics of PhotoVoltaic (PV) modules, and the prediction of an explicit empirical model has been carried out. The model consists of an explicit expression for the current as a function of the voltage; the only inputs are the parameters that are always directly available in the manufacturer's datasheet. The comparison was carried out on four representative PV technologies, based on polycrystalline Si, Heterojunction with Intrinsic Thin layer (HIT), Copper Indium Gallium Selenide (CIGS), and Cadmium Telluride (CdTe). The comparison reveals that the model replicates the experimental I-V and P-V curves to a very good degree of accuracy for the considered operating conditions and PV technologies. This validation sets a turning point in PV modelling, as it enables a reliable use of this accessible model.

    Original languageEnglish
    Pages (from-to)647-653
    Number of pages7
    JournalSolar Energy
    Volume155
    Early online date8 Jul 2017
    DOIs
    Publication statusPublished - 2017

    Keywords

    • CdTe
    • CIGS
    • HIT
    • I-V and P-V characteristics

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