Exploring characteristics of the corner sections of a domain wall trap nanostructure with the two-field direction method

Vu Nhut-Minh Ho, Le Duc-Anh Ho, Minh Tung Tran, Xuan Huu Cao, Vinh Ai Dao, Duy Hien Tong, Duc The Ngo, Duc Quang Hoang

Research output: Contribution to journalArticlepeer-review

Abstract

A 2D polycrystalline permalloy domain wall trap nanostructure with a thickness of 20 nm was studied. The structure was alternatively designed and patterned using QCAD/L-Edit software and focused-ion beam technique. With this design, a magnetic domain wall can be created and propagated with a sequence of two-field directions in a Lorentz microscopy. The trap consists of two horizontal nanowires and three 90°-tilted ones. Each nanowire has an in-plane dimension of 200 × 1000 nm 2 . The trap corners were curved to allow a created domain wall that easily moves through the structure. A head-to-head domain-wall aims to create using a continuous field, this created wall can be propagated in the trap using a sequence of two-field directions. The designed trap was simulated using the Object Oriented Micro-Magnetic Framework software. Lorentz microscopy and simulation results indicate that the propagation of a domain wall is strongly affected by the precise roughness behavior of the trap elements. Domain wall pinning and transformation of wall chirality are sensitively correlated to the corner sections of the trap structure and field directions at a certain regime. Using the two-field direction method enables us to explore characteristics of the corner sections of the patterned trap nanostructure. This study is vital to fabricate an optimal nano-trap which supports a reproducible domain wall motion. This also suggests a useful method for the domain wall propagation using sequences of two-field directions. This work provides a better understanding of wall creation and propagation in polycrystalline permalloy curved nanowires which are of interest for concepts of nonvolatile data storage devices.

Original languageEnglish
Pages (from-to)41828-41835
Number of pages8
JournalRSC Advances
Volume8
Issue number73
Early online date14 Dec 2018
DOIs
Publication statusPublished - 2018

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