Exploring room temperature spin transport under band gap opening in bilayer graphene

Christopher Anderson, Noel Natera Cordero, Victor H. Guarochico Moreira, Irina V. Grigorieva, Ivan J. Vera-Marun

Research output: Contribution to journalArticlepeer-review

Abstract

We study the room-temperature electrical control of charge and spin transport in high-quality bilayer graphene, fully encapsulated with hBN and contacted via 1D spin injectors. We show that spin transport in this device architecture is measurable at room temperature and its spin transport parameters can be modulated by opening of a band gap via a perpendicular displacement field. The modulation of the spin current is dominated by the control of the spin relaxation time with displacement field, demonstrating the basic operation of a spin-based field-effect transistor.
Original languageEnglish
Article number10343
JournalScientific Reports
Volume13
DOIs
Publication statusPublished - 26 Jun 2023

Fingerprint

Dive into the research topics of 'Exploring room temperature spin transport under band gap opening in bilayer graphene'. Together they form a unique fingerprint.

Cite this