Exploring the Influence of Mott-Schottky Acquisition Parameters on the Semiconduction Behaviour of Modified Native Aluminium Oxide Films

R. Kroll; Z. Henderson; B. F. Spencer; P.   Kaya; V.  Knoblauch; Dirk L. Engelberg

doi:10.1016/j.jelechem.2023.117481

Exploring the Influence of Mott-Schottky Acquisition Parameters on the Semiconduction Behaviour of Modified Native Aluminium Oxide Films

R. Kroll, Z. Henderson, B. F. Spencer, P. Kaya , V. Knoblauch , Dirk L. Engelberg

Aalen University of Applied Sciences

Research output: Contribution to journal › Article › peer-review

Abstract

The Mott-Schottky approach was applied to access the semiconduction behaviour of native aluminium oxide films of pure aluminium (99.5 wt. %) and Al-7075-T6 (Al-Zn-Mg-Cu) alloy investigating the effect of acquisition parameters and surface treatment. Pristine samples were subjected to Mott-Schottky cycling, showing higher defective donor states for Al-7075-T6. The application of step rates of 50-100 mV resulted in flat M-S plots, implicating the influence of the potential independent Helmholtz layer on the space charge capacitance. Chemical etching reduced the oxide thickness for both specimens, whereas higher defect donor densities were determined for pure Al.

Original language	English
Article number	117481
Journal	Journal of Electroanalytical Chemistry
Volume	939
Early online date	23 Apr 2023
DOIs	https://doi.org/10.1016/j.jelechem.2023.117481
Publication status	Published - 15 Jun 2023

Keywords

Aluminium alloys
chemical etching
Mott-Schottky
lab-based HAXPES

Research Beacons, Institutes and Platforms

Henry Royce Institute

Access to Document

10.1016/j.jelechem.2023.117481Licence: CC BY

Hard X-ray Photoelectron Spectroscopy (HAXPES)
Spencer, B. (Senior Technical Specialist) & Flavell, W. (Academic lead)
Faculty of Science and Engineering
Facility/equipment: Facility
Surface Characterisation
Spencer, B. (Platform Lead), Nikiel, M. (Technical Specialist), Sheraz, S. (Technical Specialist), Li, K. (Technical Specialist), Dwyer, L. (Technical Specialist), Wall, S. (Technical Specialist), Williams, W. (Technical Specialist), Forrest, A. (Senior Technician), Fong, J. (Senior Technician), Filip, T. (Technician), Kundu, S. (Technical Specialist), Moore, K. (Academic lead), Walton, A. (Academic lead) & Lockyer, N. (Academic lead)
FSE Research
Facility/equipment: Platform

Cite this

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title = "Exploring the Influence of Mott-Schottky Acquisition Parameters on the Semiconduction Behaviour of Modified Native Aluminium Oxide Films",

abstract = "The Mott-Schottky approach was applied to access the semiconduction behaviour of native aluminium oxide films of pure aluminium (99.5 wt. %) and Al-7075-T6 (Al-Zn-Mg-Cu) alloy investigating the effect of acquisition parameters and surface treatment. Pristine samples were subjected to Mott-Schottky cycling, showing higher defective donor states for Al-7075-T6. The application of step rates of 50-100 mV resulted in flat M-S plots, implicating the influence of the potential independent Helmholtz layer on the space charge capacitance. Chemical etching reduced the oxide thickness for both specimens, whereas higher defect donor densities were determined for pure Al.",

keywords = "Aluminium alloys, chemical etching, Mott-Schottky, lab-based HAXPES",

author = "R. Kroll and Z. Henderson and Spencer, {B. F.} and P. Kaya and V. Knoblauch and Engelberg, {Dirk L.}",

year = "2023",

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day = "15",

doi = "10.1016/j.jelechem.2023.117481",

language = "English",

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journal = "Journal of Electroanalytical Chemistry",

issn = "1572-6657",

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TY - JOUR

T1 - Exploring the Influence of Mott-Schottky Acquisition Parameters on the Semiconduction Behaviour of Modified Native Aluminium Oxide Films

AU - Kroll, R.

AU - Henderson, Z.

AU - Spencer, B. F.

AU - Kaya , P.

AU - Knoblauch , V.

AU - Engelberg, Dirk L.

PY - 2023/6/15

Y1 - 2023/6/15

N2 - The Mott-Schottky approach was applied to access the semiconduction behaviour of native aluminium oxide films of pure aluminium (99.5 wt. %) and Al-7075-T6 (Al-Zn-Mg-Cu) alloy investigating the effect of acquisition parameters and surface treatment. Pristine samples were subjected to Mott-Schottky cycling, showing higher defective donor states for Al-7075-T6. The application of step rates of 50-100 mV resulted in flat M-S plots, implicating the influence of the potential independent Helmholtz layer on the space charge capacitance. Chemical etching reduced the oxide thickness for both specimens, whereas higher defect donor densities were determined for pure Al.

AB - The Mott-Schottky approach was applied to access the semiconduction behaviour of native aluminium oxide films of pure aluminium (99.5 wt. %) and Al-7075-T6 (Al-Zn-Mg-Cu) alloy investigating the effect of acquisition parameters and surface treatment. Pristine samples were subjected to Mott-Schottky cycling, showing higher defective donor states for Al-7075-T6. The application of step rates of 50-100 mV resulted in flat M-S plots, implicating the influence of the potential independent Helmholtz layer on the space charge capacitance. Chemical etching reduced the oxide thickness for both specimens, whereas higher defect donor densities were determined for pure Al.

KW - Aluminium alloys

KW - chemical etching

KW - Mott-Schottky

KW - lab-based HAXPES

U2 - 10.1016/j.jelechem.2023.117481

DO - 10.1016/j.jelechem.2023.117481

M3 - Article

SN - 1572-6657

VL - 939

JO - Journal of Electroanalytical Chemistry

JF - Journal of Electroanalytical Chemistry

M1 - 117481

ER -

Exploring the Influence of Mott-Schottky Acquisition Parameters on the Semiconduction Behaviour of Modified Native Aluminium Oxide Films

Abstract

Keywords

Research Beacons, Institutes and Platforms

Access to Document

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Equipment

Hard X-ray Photoelectron Spectroscopy (HAXPES)

Surface Characterisation

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