Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared

N. Unsuree; T. Mustafa; H. Selvi; P. Parkinson; T. J. Echtermeyer

doi:10.1109/EMAP.2018.8660882

Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared

N. Unsuree, T. Mustafa, H. Selvi, P. Parkinson, T. J. Echtermeyer^*

^*Corresponding author for this work

UMIST

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400... 1100nm due to its band gap of ∼1.1eV. Materials for light detection in the wavelength range >1100 nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from ∼400... 1700nm.

Original language	English
Title of host publication	EMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging
Publisher	IEEE
ISBN (Electronic)	9781538656426
DOIs	https://doi.org/10.1109/EMAP.2018.8660882
Publication status	Published - 7 Mar 2019
Event	20th International Conference on Electronic Materials and Packaging - Clear Water Bay, Hong Kong Duration: 17 Dec 2018 → 20 Dec 2018

Conference

Conference	20th International Conference on Electronic Materials and Packaging
Abbreviated title	EMAP 2018
Country/Territory	Hong Kong
City	Clear Water Bay
Period	17/12/18 → 20/12/18

Research Beacons, Institutes and Platforms

Photon Science Institute
National Graphene Institute

Access to Document

10.1109/EMAP.2018.8660882

Cite this

Unsuree, N., Mustafa, T., Selvi, H., Parkinson, P., & Echtermeyer, T. J. (2019). Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared. In EMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging Article 8660882 IEEE. https://doi.org/10.1109/EMAP.2018.8660882

@inproceedings{98846288ea7f42d78eac9ed2d25ba4cf,

title = "Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared",

abstract = "Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400... 1100nm due to its band gap of ∼1.1eV. Materials for light detection in the wavelength range >1100 nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from ∼400... 1700nm.",

author = "N. Unsuree and T. Mustafa and H. Selvi and P. Parkinson and Echtermeyer, {T. J.}",

year = "2019",

month = mar,

day = "7",

doi = "10.1109/EMAP.2018.8660882",

language = "English",

booktitle = "EMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging",

publisher = "IEEE",

address = "United States",

note = "20th International Conference on Electronic Materials and Packaging, EMAP 2018 ; Conference date: 17-12-2018 Through 20-12-2018",

}

Unsuree, N, Mustafa, T, Selvi, H, Parkinson, P & Echtermeyer, TJ 2019, Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared. in EMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging., 8660882, IEEE, 20th International Conference on Electronic Materials and Packaging, Clear Water Bay, Hong Kong, 17/12/18. https://doi.org/10.1109/EMAP.2018.8660882

Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared. / Unsuree, N.; Mustafa, T.; Selvi, H. et al.
EMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging. IEEE, 2019. 8660882.

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors

T2 - 20th International Conference on Electronic Materials and Packaging

AU - Unsuree, N.

AU - Mustafa, T.

AU - Selvi, H.

AU - Parkinson, P.

AU - Echtermeyer, T. J.

PY - 2019/3/7

Y1 - 2019/3/7

N2 - Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400... 1100nm due to its band gap of ∼1.1eV. Materials for light detection in the wavelength range >1100 nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from ∼400... 1700nm.

AB - Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400... 1100nm due to its band gap of ∼1.1eV. Materials for light detection in the wavelength range >1100 nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from ∼400... 1700nm.

U2 - 10.1109/EMAP.2018.8660882

DO - 10.1109/EMAP.2018.8660882

M3 - Conference contribution

AN - SCOPUS:85063918303

BT - EMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging

PB - IEEE

Y2 - 17 December 2018 through 20 December 2018

ER -

Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared

Abstract

Conference

Research Beacons, Institutes and Platforms

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Cite this