Extended spectral range CMOS-compatible Graphene/Silicon-Hybrid-Photodetectors: Free-space light detection from the visible to short-wave infrared

N. Unsuree, T. Mustafa, H. Selvi, P. Parkinson, T. J. Echtermeyer

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400... 1100nm due to its band gap of ∼1.1eV. Materials for light detection in the wavelength range >1100 nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from ∼400... 1700nm.

    Original languageEnglish
    Title of host publicationEMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging
    PublisherIEEE
    ISBN (Electronic)9781538656426
    DOIs
    Publication statusPublished - 7 Mar 2019
    Event20th International Conference on Electronic Materials and Packaging - Clear Water Bay, Hong Kong
    Duration: 17 Dec 201820 Dec 2018

    Conference

    Conference20th International Conference on Electronic Materials and Packaging
    Abbreviated titleEMAP 2018
    Country/TerritoryHong Kong
    CityClear Water Bay
    Period17/12/1820/12/18

    Research Beacons, Institutes and Platforms

    • Photon Science Institute
    • National Graphene Institute

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