Abstract
Detection of light in the near- and short-wave infrared spectral region is of great interest for applications ranging from imaging to sensing. However, silicon commonly employed for photodetectors is limited in its spectral range to wavelengths of 400... 1100nm due to its band gap of ∼1.1eV. Materials for light detection in the wavelength range >1100 nm are typically III-V-based semiconductors such as e.g. InGaAs which are difficult to integrate with CMOS technology, hindering use in main-stream applications due to technical issues and associated high cost. Here, we present graphene-silicon hybrid structure photodetectors which demonstrate an extended spectral detection range from ∼400... 1700nm.
Original language | English |
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Title of host publication | EMAP 2018 - 2018 20th International Conference on Electronic Materials and Packaging |
Publisher | IEEE |
ISBN (Electronic) | 9781538656426 |
DOIs | |
Publication status | Published - 7 Mar 2019 |
Event | 20th International Conference on Electronic Materials and Packaging - Clear Water Bay, Hong Kong Duration: 17 Dec 2018 → 20 Dec 2018 |
Conference
Conference | 20th International Conference on Electronic Materials and Packaging |
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Abbreviated title | EMAP 2018 |
Country/Territory | Hong Kong |
City | Clear Water Bay |
Period | 17/12/18 → 20/12/18 |
Research Beacons, Institutes and Platforms
- Photon Science Institute
- National Graphene Institute