Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

A. Wells; M. J. Uren; R. S. Balmer; K. J. Nash; T. Martin; M. Missous

doi:10.1002/pssa.200461352

Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

A. Wells, M. J. Uren^*, R. S. Balmer, K. J. Nash, T. Martin, M. Missous

^*Corresponding author for this work

Department of Electrical & Electronic Engineering

QinetiQ

Research output: Contribution to journal › Article › peer-review

Abstract

The alloy, polar optical and acoustic phonon scattering terms in the mobility in a GaN HFET have been extracted as a function of temperature and number density. It was found that roughness and Coulomb scattering are insignificant at room temperature. Samples with and without an AlN layer at the AlGaN/GaN interface were compared and used to extract the alloy scattering. At room temperature the mobility was dominated by intrinsic scattering terms.

Original language	English
Pages (from-to)	812-815
Number of pages	4
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	202
Issue number	5
DOIs	https://doi.org/10.1002/pssa.200461352
Publication status	Published - 1 Apr 2005

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abstract = "The alloy, polar optical and acoustic phonon scattering terms in the mobility in a GaN HFET have been extracted as a function of temperature and number density. It was found that roughness and Coulomb scattering are insignificant at room temperature. Samples with and without an AlN layer at the AlGaN/GaN interface were compared and used to extract the alloy scattering. At room temperature the mobility was dominated by intrinsic scattering terms.",

author = "A. Wells and Uren, {M. J.} and Balmer, {R. S.} and Nash, {K. J.} and T. Martin and M. Missous",

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T1 - Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

AU - Wells, A.

AU - Uren, M. J.

AU - Balmer, R. S.

AU - Nash, K. J.

AU - Martin, T.

AU - Missous, M.

PY - 2005/4/1

Y1 - 2005/4/1

N2 - The alloy, polar optical and acoustic phonon scattering terms in the mobility in a GaN HFET have been extracted as a function of temperature and number density. It was found that roughness and Coulomb scattering are insignificant at room temperature. Samples with and without an AlN layer at the AlGaN/GaN interface were compared and used to extract the alloy scattering. At room temperature the mobility was dominated by intrinsic scattering terms.

AB - The alloy, polar optical and acoustic phonon scattering terms in the mobility in a GaN HFET have been extracted as a function of temperature and number density. It was found that roughness and Coulomb scattering are insignificant at room temperature. Samples with and without an AlN layer at the AlGaN/GaN interface were compared and used to extract the alloy scattering. At room temperature the mobility was dominated by intrinsic scattering terms.

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U2 - 10.1002/pssa.200461352

DO - 10.1002/pssa.200461352

M3 - Article

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SN - 1862-6300

VL - 202

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JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 5

ER -

Extraction of temperature and number dependent scattering rates for an AlGaN/GaN 2DEG

Abstract

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