Extremely uniform tunnel barriers for low-cost device manufacture

Mohamed Missous; Michael J. Kelly; James Sexton

doi:10.1109/LED.2015.2427335

Extremely uniform tunnel barriers for low-cost device manufacture

Mohamed Missous, Michael J. Kelly, James Sexton

Research output: Contribution to journal › Article › peer-review

Abstract

We report on the final steps needed to achieve the level of control over the properties of single tunnel barriers of AlAs needed to allow the manufacture of high-volume low-cost microwave and millimeter-waves detectors. We achieve a 1% standard deviation of the current-voltage characteristics across 2-in wafers and average currents from different wafers varying by 1%, when modeling shows that a monolayer error in the AlAs barrier layer thickness would result in a 270% change in the same electrical characteristics.

Original language	English
Article number	7097674
Pages (from-to)	543-545
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	6
DOIs	https://doi.org/10.1109/LED.2015.2427335
Publication status	Published - 1 Jun 2015

Keywords

manufacture
molecular beam epitaxy
semiconductors
tunnel devices

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10.1109/LED.2015.2427335

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@article{bd53a55ce5d84ebea2e33f6a1e558cd1,

title = "Extremely uniform tunnel barriers for low-cost device manufacture",

abstract = "We report on the final steps needed to achieve the level of control over the properties of single tunnel barriers of AlAs needed to allow the manufacture of high-volume low-cost microwave and millimeter-waves detectors. We achieve a 1% standard deviation of the current-voltage characteristics across 2-in wafers and average currents from different wafers varying by 1%, when modeling shows that a monolayer error in the AlAs barrier layer thickness would result in a 270% change in the same electrical characteristics.",

keywords = "manufacture, molecular beam epitaxy, semiconductors, tunnel devices",

author = "Mohamed Missous and Kelly, {Michael J.} and James Sexton",

year = "2015",

month = jun,

day = "1",

doi = "10.1109/LED.2015.2427335",

language = "English",

volume = "36",

pages = "543--545",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - Extremely uniform tunnel barriers for low-cost device manufacture

AU - Missous, Mohamed

AU - Kelly, Michael J.

AU - Sexton, James

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We report on the final steps needed to achieve the level of control over the properties of single tunnel barriers of AlAs needed to allow the manufacture of high-volume low-cost microwave and millimeter-waves detectors. We achieve a 1% standard deviation of the current-voltage characteristics across 2-in wafers and average currents from different wafers varying by 1%, when modeling shows that a monolayer error in the AlAs barrier layer thickness would result in a 270% change in the same electrical characteristics.

AB - We report on the final steps needed to achieve the level of control over the properties of single tunnel barriers of AlAs needed to allow the manufacture of high-volume low-cost microwave and millimeter-waves detectors. We achieve a 1% standard deviation of the current-voltage characteristics across 2-in wafers and average currents from different wafers varying by 1%, when modeling shows that a monolayer error in the AlAs barrier layer thickness would result in a 270% change in the same electrical characteristics.

KW - manufacture

KW - molecular beam epitaxy

KW - semiconductors

KW - tunnel devices

UR - http://www.scopus.com/inward/record.url?scp=84930507029&partnerID=8YFLogxK

U2 - 10.1109/LED.2015.2427335

DO - 10.1109/LED.2015.2427335

M3 - Article

AN - SCOPUS:84930507029

SN - 0741-3106

VL - 36

SP - 543

EP - 545

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

M1 - 7097674

ER -

Extremely uniform tunnel barriers for low-cost device manufacture

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Keywords

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