Abstract
The fabrication and characterization of AlGaAs/InGaAs/GaAs pseudomorphic HEMT (p-HEMT) with in-situ deposited epitaxial aluminum gate by MBE is reported. A simpler technique of fabricating HEMT without the inherent problem associated with gate recess is described. Its advantages over conventional method of fabricating HEMT are also shown. The near ideal epitaxial-Al/AlGaAs Schottky barrier contact is exploited in this work, resulting to an excellent I-V and thermal treatment characteristics. This epitaxial Al diodes have better ideality factor, higher barrier height and higher breakdown voltage but high series resistance than that of Au diodes.
| Original language | English |
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| Pages | 297-302 |
| Number of pages | 6 |
| Publication status | Published - 1 Dec 1997 |
| Event | Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, UK Duration: 24 Nov 1997 → 25 Nov 1997 |
Conference
| Conference | Proceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO |
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| City | London, UK |
| Period | 24/11/97 → 25/11/97 |