Fabrication and characterization of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminum grown by MBE

Azlan Abdul Aziz, Mohamed Missous

Research output: Contribution to conferencePaperpeer-review

Abstract

The fabrication and characterization of AlGaAs/InGaAs/GaAs pseudomorphic HEMT (p-HEMT) with in-situ deposited epitaxial aluminum gate by MBE is reported. A simpler technique of fabricating HEMT without the inherent problem associated with gate recess is described. Its advantages over conventional method of fabricating HEMT are also shown. The near ideal epitaxial-Al/AlGaAs Schottky barrier contact is exploited in this work, resulting to an excellent I-V and thermal treatment characteristics. This epitaxial Al diodes have better ideality factor, higher barrier height and higher breakdown voltage but high series resistance than that of Au diodes.

Original languageEnglish
Pages297-302
Number of pages6
Publication statusPublished - 1 Dec 1997
EventProceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO - London, UK
Duration: 24 Nov 199725 Nov 1997

Conference

ConferenceProceedings of the 1997 Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO
CityLondon, UK
Period24/11/9725/11/97

Fingerprint

Dive into the research topics of 'Fabrication and characterization of AlGaAs/InGaAs/GaAs pseudomorphic HEMT with in-situ epitaxial aluminum grown by MBE'. Together they form a unique fingerprint.

Cite this