Fabrication and evaluation of ternary Co-Fe-Si structures produced by ion beam synthesis

Tim D. Hunt, Brian J. Sealy, Jochen Hanebeck, Karen J. Reeson, Kevin P. Homewood, Russell M. Gwilliam, C. Douglas Meekison, G. Roger Booker

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Dual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 μm was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.

    Original languageEnglish
    Title of host publicationMaterials Research Society Symposium Proceedings
    PublisherMaterials Research Society
    Pages899-904
    Number of pages6
    Volume279
    ISBN (Print)1558991743
    Publication statusPublished - 1993
    EventBeam Solid Interactions: Fundamentals and Applications - Boston, United States
    Duration: 30 Nov 19924 Dec 1992

    Conference

    ConferenceBeam Solid Interactions: Fundamentals and Applications
    Country/TerritoryUnited States
    CityBoston
    Period30/11/924/12/92

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