Fabrication and evaluation of ternary Co-Fe-Si structures produced by ion beam synthesis

Tim D. Hunt; Brian J. Sealy; Jochen Hanebeck; Karen J. Reeson; Kevin P. Homewood; Russell M. Gwilliam; C. Douglas Meekison; G. Roger Booker

Fabrication and evaluation of ternary Co-Fe-Si structures produced by ion beam synthesis

Tim D. Hunt^*, Brian J. Sealy, Jochen Hanebeck, Karen J. Reeson, Kevin P. Homewood, Russell M. Gwilliam, C. Douglas Meekison, G. Roger Booker

^*Corresponding author for this work

University of Surrey

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Dual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi₂ and FeSi₂. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi₂ upon a CoSi₂ layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 μm was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi₂ layer.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Materials Research Society
Pages	899-904
Number of pages	6
Volume	279
ISBN (Print)	1558991743
Publication status	Published - 1993
Event	Beam Solid Interactions: Fundamentals and Applications - Boston, United States Duration: 30 Nov 1992 → 4 Dec 1992

Conference

Conference	Beam Solid Interactions: Fundamentals and Applications
Country/Territory	United States
City	Boston
Period	30/11/92 → 4/12/92

Cite this

@inproceedings{05f26a5d0f2a4c33a601240d649aea97,

title = "Fabrication and evaluation of ternary Co-Fe-Si structures produced by ion beam synthesis",

abstract = "Dual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 μm was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.",

author = "Hunt, {Tim D.} and Sealy, {Brian J.} and Jochen Hanebeck and Reeson, {Karen J.} and Homewood, {Kevin P.} and Gwilliam, {Russell M.} and Meekison, {C. Douglas} and Booker, {G. Roger}",

year = "1993",

language = "English",

isbn = "1558991743",

volume = "279",

pages = "899--904",

booktitle = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

address = "United States",

note = "Beam Solid Interactions: Fundamentals and Applications ; Conference date: 30-11-1992 Through 04-12-1992",

}

Hunt, TD, Sealy, BJ, Hanebeck, J, Reeson, KJ, Homewood, KP, Gwilliam, RM, Meekison, CD & Booker, GR 1993, Fabrication and evaluation of ternary Co-Fe-Si structures produced by ion beam synthesis. in Materials Research Society Symposium Proceedings. vol. 279, Materials Research Society, pp. 899-904, Beam Solid Interactions: Fundamentals and Applications, Boston, Massachusetts, United States, 30/11/92.

TY - GEN

T1 - Fabrication and evaluation of ternary Co-Fe-Si structures produced by ion beam synthesis

AU - Hunt, Tim D.

AU - Sealy, Brian J.

AU - Hanebeck, Jochen

AU - Reeson, Karen J.

AU - Homewood, Kevin P.

AU - Gwilliam, Russell M.

AU - Meekison, C. Douglas

AU - Booker, G. Roger

PY - 1993

Y1 - 1993

N2 - Dual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 μm was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.

AB - Dual implantation of cobalt and iron into silicon (100) wafers and subsequent annealing has been used to form layers containing mixtures of CoSi2 and FeSi2. The structure and properties of the layers were followed by Secondary Ion Mass Spectrometry (SIMS), cross-sectional transmission electron microscopy (XTEM), Transmission Electron Diffraction (TED), Rutherford Backscattering Spectroscopy (RBS), and photoluminescence (PL). When a high dose of both species was implanted, segregation of the cobalt and iron occurred which for 1000°C anneals, resulted in an epitaxial layer of αFeSi2 upon a CoSi2 layer. The epitaxial quality of both of these layers was superior to those previously fabricated by single species implants. For a low dose cobalt implant followed by a high dose iron implant, a single phase solid solution was formed and segregation did not occur. Photoluminescence at 1.54 μm was observed from this layer, but with a much lower intensity and a broader line width than that from a pure βFeSi2 layer.

UR - http://www.scopus.com/inward/record.url?scp=0027228998&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027228998

SN - 1558991743

VL - 279

SP - 899

EP - 904

BT - Materials Research Society Symposium Proceedings

PB - Materials Research Society

T2 - Beam Solid Interactions: Fundamentals and Applications

Y2 - 30 November 1992 through 4 December 1992

ER -

Fabrication and evaluation of ternary Co-Fe-Si structures produced by ion beam synthesis

Abstract

Conference

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