Abstract
We report on the fabrication of unipolar nanodiodes into an InAs/Al xGa 1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.
Original language | Undefined |
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Title of host publication | IRMMW-THz 2011 - 36th International Conference on Infrared, Millimeter, and Terahertz Waves |
DOIs | |
Publication status | Published - 2011 |