Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

J. Kettle; S. Whitelegg; A. M. Song; M. B. Madec; S. Yeates; M. L. Turner; Libor Kotacka; Vladimir Kolarik

doi:10.1116/1.3253606

Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

J. Kettle
, S. Whitelegg
, A. M. Song
, M. B. Madec
, S. Yeates
, M. L. Turner
, Libor Kotacka
, Vladimir Kolarik

Research output: Contribution to journal › Article › peer-review

Abstract

In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range. © 2009 American Vacuum Society.

Original language	English
Pages (from-to)	2801-2804
Number of pages	3
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	27
Issue number	6
DOIs	https://doi.org/10.1116/1.3253606
Publication status	Published - 2009

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Kettle, J., Whitelegg, S., Song, A. M., Madec, M. B., Yeates, S., Turner, M. L., Kotacka, L., & Kolarik, V. (2009). Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 27(6), 2801-2804. https://doi.org/10.1116/1.3253606

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AU - Madec, M. B.

AU - Yeates, S.

AU - Turner, M. L.

AU - Kotacka, Libor

AU - Kolarik, Vladimir

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AB - In this article, the fabrication of poly(3-hexylthiophene) self-switching diodes (SSDs) is described. The unique design of the SSD enables it to be fabricated from a single layer of semiconductor material with a single lithographic step using nanoimprint lithography combined with argon milling. The resultant device morphology showed good uniformity and the SSDs exhibited pronounced current rectification and wide working voltage range. © 2009 American Vacuum Society.

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M3 - Article

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ER -

Fabrication of poly(3-hexylthiophene) self-switching diodes using thermal nanoimprint lithography and argon milling

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