TY - JOUR
T1 - Ferroelectric and antiferroelectric polarisation switching characteristics of Bi(Mg 0.5Ti 0.5)O 3-PbTiO 3 ceramics
AU - Sharma, S.
AU - Hall, D. A.
PY - 2010/4
Y1 - 2010/4
N2 - Bi(Mg 0.5Ti 0.5)O 3-PbTiO 3 (BMT-PT) ceramics, with BMT-PT ratios ranging from 70-30 to 50-50, were prepared by a conventional solid state reaction process. The 50-50 BMT-PT ceramic possessed a tetragonal perovskite structure with a c/a ratio of ~1.037. Increasing BMT content led to a reduction of tetragonality and a change of structure to a rhombohedral or pseudo-cubic phase. Dielectric measurements, carried out during heating, indicated the occurrence of two phase transformations, which were identified as relaxor ferroelectric to antiferroelectric (at a temperature in the range from 150-300 °C) and antiferroelectric to paraelectric (at a temperature around 500 °C). The antiferroelectric nature of the 60-40 and 70-30 BMT-PT ceramics in the intermediate temperature range was confirmed by polarisation-electric field hysteresis measurements. © 2009 Springer Science+Business Media, LLC.
AB - Bi(Mg 0.5Ti 0.5)O 3-PbTiO 3 (BMT-PT) ceramics, with BMT-PT ratios ranging from 70-30 to 50-50, were prepared by a conventional solid state reaction process. The 50-50 BMT-PT ceramic possessed a tetragonal perovskite structure with a c/a ratio of ~1.037. Increasing BMT content led to a reduction of tetragonality and a change of structure to a rhombohedral or pseudo-cubic phase. Dielectric measurements, carried out during heating, indicated the occurrence of two phase transformations, which were identified as relaxor ferroelectric to antiferroelectric (at a temperature in the range from 150-300 °C) and antiferroelectric to paraelectric (at a temperature around 500 °C). The antiferroelectric nature of the 60-40 and 70-30 BMT-PT ceramics in the intermediate temperature range was confirmed by polarisation-electric field hysteresis measurements. © 2009 Springer Science+Business Media, LLC.
U2 - 10.1007/s10854-009-9933-0
DO - 10.1007/s10854-009-9933-0
M3 - Article
SN - 1573-482X
VL - 21
SP - 405
EP - 409
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 4
ER -