Field-effect tunneling transistor based on vertical graphene heterostructures

L. Britnell, R. V. Gorbachev, R. Jalil, B. D. Belle, F. Schedin, A. Mishchenko, T. Georgiou, M. I. Katsnelson, L. Eaves, S. V. Morozov, N. M R Peres, J. Leist, A. K. Geim, K. S. Novoselov, L. A. Ponomarenko

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