Abstract
GeAs is a layered material of the IV–V groups that is attracting growing attention for possibleapplications in electronic and optoelectronic devices. In this study, exfoliated multilayer GeAsnanoflakes are structurally characterized and used as the channel of back-gate field-effecttransistors. It is shown that their gate-modulated p-type conduction is decreased by exposure tolight or electron beam. Moreover, the observation of a field emission (FE) current demonstratesthe suitability of GeAs nanoflakes as cold cathodes for electron emission and opens up newperspective applications of two-dimensional GeAs in vacuum electronics. FE occurs with aturn-on field of ∼80 V µm−1and attains a current density higher than 10 A cm−2, following thegeneral Fowler–Nordheim model with high reproducibility
| Original language | English |
|---|---|
| Article number | 105302 |
| Number of pages | 8 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 54 |
| Issue number | 10 |
| Publication status | Published - 2021 |
Keywords
- GeAs
- 2D materials
- Field-effect transistor,
- Field emission
- Electrical conductivity
- Anisotropy