Abstract
Results of the high-resolution Laplace DLTS studies on the EL2 defect in GaAs are presented. The ideas of a common short-range EL2 charge compensation as well as a possible presence of the oxygen-related (ELO) defect in GaAs are discussed in the context of the observed free structure of the thermal electronemission found for all samples examined.
Original language | English |
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Pages (from-to) | 1001-1006 |
Number of pages | 6 |
Journal | Materials Science Forum |
Volume | 143-4 |
Issue number | pt 2 |
Publication status | Published - 1994 |
Event | Proceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria Duration: 18 Jul 1993 → 23 Jul 1993 |