Fine structure observed in thermal emission process for the EL2 defect in GaAs

L. Dobaczewski*, P. Kaczor, A. R. Peaker

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Results of the high-resolution Laplace DLTS studies on the EL2 defect in GaAs are presented. The ideas of a common short-range EL2 charge compensation as well as a possible presence of the oxygen-related (ELO) defect in GaAs are discussed in the context of the observed free structure of the thermal electronemission found for all samples examined.

Original languageEnglish
Pages (from-to)1001-1006
Number of pages6
JournalMaterials Science Forum
Volume143-4
Issue numberpt 2
Publication statusPublished - 1994
EventProceedings of the 17th International Conference on Defects in Semiconductors. Part 1 (of 3) - Gmunden, Austria
Duration: 18 Jul 199323 Jul 1993

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