Finite element analysis of millimeter and sub-millimeter wave gyroelectric waveguide components

Lian Yuh Tio, Andrew A P Gibson, Bernice M. Dillon, Lionel E. Davis

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Gallium arsenide (GaAs) and indium antimonide (InSb) are two candidate semiconductor materials for supporting nonreciprocal behavior at millimeter wave and sub-millimeter wave frequencies. Each material is characterized as a function of bias field/frequency and different operating regions are identified either side of the extraordinary wave resonance. An eigenvalue finite element formulation is developed to calculate the complex propagation constant for general gyroelectric waveguide structures. The solver is used to investigate nonreciprocal phase shift and attenuation in a transversely magnetized, semiconductor slab loaded waveguide in the various operating regions. Several potential regions of isolation and differential phase shift have been identified for exploitation in the millimeter wave range for GaAs and in the sub-millimeter wave range for InSb.
    Original languageEnglish
    Pages (from-to)405-421
    Number of pages16
    JournalElectromagnetics
    Volume26
    Issue number6
    DOIs
    Publication statusPublished - 1 Sep 2006

    Keywords

    • Finite element methods
    • Millimeter wave waveguide
    • Nonreciprocal wave propagation
    • Semiconductor loaded waveguides
    • Sub-millimeter wave waveguide

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