Finite element analysis of millimeter and sub-millimeter wave gyroelectric waveguide components

Lian Yuh Tio; Andrew A P Gibson; Bernice M. Dillon; Lionel E. Davis

doi:10.1080/02726340600837875

Finite element analysis of millimeter and sub-millimeter wave gyroelectric waveguide components

Lian Yuh Tio, Andrew A P Gibson, Bernice M. Dillon, Lionel E. Davis

Research output: Contribution to journal › Article › peer-review

Abstract

Gallium arsenide (GaAs) and indium antimonide (InSb) are two candidate semiconductor materials for supporting nonreciprocal behavior at millimeter wave and sub-millimeter wave frequencies. Each material is characterized as a function of bias field/frequency and different operating regions are identified either side of the extraordinary wave resonance. An eigenvalue finite element formulation is developed to calculate the complex propagation constant for general gyroelectric waveguide structures. The solver is used to investigate nonreciprocal phase shift and attenuation in a transversely magnetized, semiconductor slab loaded waveguide in the various operating regions. Several potential regions of isolation and differential phase shift have been identified for exploitation in the millimeter wave range for GaAs and in the sub-millimeter wave range for InSb.

Original language	English
Pages (from-to)	405-421
Number of pages	16
Journal	Electromagnetics
Volume	26
Issue number	6
DOIs	https://doi.org/10.1080/02726340600837875
Publication status	Published - 1 Sept 2006

Keywords

Finite element methods
Millimeter wave waveguide
Nonreciprocal wave propagation
Semiconductor loaded waveguides
Sub-millimeter wave waveguide

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10.1080/02726340600837875

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title = "Finite element analysis of millimeter and sub-millimeter wave gyroelectric waveguide components",

abstract = "Gallium arsenide (GaAs) and indium antimonide (InSb) are two candidate semiconductor materials for supporting nonreciprocal behavior at millimeter wave and sub-millimeter wave frequencies. Each material is characterized as a function of bias field/frequency and different operating regions are identified either side of the extraordinary wave resonance. An eigenvalue finite element formulation is developed to calculate the complex propagation constant for general gyroelectric waveguide structures. The solver is used to investigate nonreciprocal phase shift and attenuation in a transversely magnetized, semiconductor slab loaded waveguide in the various operating regions. Several potential regions of isolation and differential phase shift have been identified for exploitation in the millimeter wave range for GaAs and in the sub-millimeter wave range for InSb.",

keywords = "Finite element methods, Millimeter wave waveguide, Nonreciprocal wave propagation, Semiconductor loaded waveguides, Sub-millimeter wave waveguide",

author = "Tio, {Lian Yuh} and Gibson, {Andrew A P} and Dillon, {Bernice M.} and Davis, {Lionel E.}",

year = "2006",

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doi = "10.1080/02726340600837875",

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T1 - Finite element analysis of millimeter and sub-millimeter wave gyroelectric waveguide components

AU - Tio, Lian Yuh

AU - Gibson, Andrew A P

AU - Dillon, Bernice M.

AU - Davis, Lionel E.

PY - 2006/9/1

Y1 - 2006/9/1

N2 - Gallium arsenide (GaAs) and indium antimonide (InSb) are two candidate semiconductor materials for supporting nonreciprocal behavior at millimeter wave and sub-millimeter wave frequencies. Each material is characterized as a function of bias field/frequency and different operating regions are identified either side of the extraordinary wave resonance. An eigenvalue finite element formulation is developed to calculate the complex propagation constant for general gyroelectric waveguide structures. The solver is used to investigate nonreciprocal phase shift and attenuation in a transversely magnetized, semiconductor slab loaded waveguide in the various operating regions. Several potential regions of isolation and differential phase shift have been identified for exploitation in the millimeter wave range for GaAs and in the sub-millimeter wave range for InSb.

AB - Gallium arsenide (GaAs) and indium antimonide (InSb) are two candidate semiconductor materials for supporting nonreciprocal behavior at millimeter wave and sub-millimeter wave frequencies. Each material is characterized as a function of bias field/frequency and different operating regions are identified either side of the extraordinary wave resonance. An eigenvalue finite element formulation is developed to calculate the complex propagation constant for general gyroelectric waveguide structures. The solver is used to investigate nonreciprocal phase shift and attenuation in a transversely magnetized, semiconductor slab loaded waveguide in the various operating regions. Several potential regions of isolation and differential phase shift have been identified for exploitation in the millimeter wave range for GaAs and in the sub-millimeter wave range for InSb.

KW - Finite element methods

KW - Millimeter wave waveguide

KW - Nonreciprocal wave propagation

KW - Semiconductor loaded waveguides

KW - Sub-millimeter wave waveguide

U2 - 10.1080/02726340600837875

DO - 10.1080/02726340600837875

M3 - Article

SN - 1532-527X

VL - 26

SP - 405

EP - 421

JO - Electromagnetics

JF - Electromagnetics

IS - 6

ER -

Finite element analysis of millimeter and sub-millimeter wave gyroelectric waveguide components

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Keywords

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