First fabrication of full 3D-detectors at SINTEF

Thor Erik Hansen, Angela Kok, Trond A. Hansen, Nicolas Lietaer, Michal Mielnik, Preben Stors, Cinzia Da'Via, Jasmine Hasi, Chris Kenney, Sherwood Parker

    Research output: Contribution to journalArticlepeer-review

    Abstract

    3D-detectors, with electrodes penetrating through the entire substrates have drawn great interests for high energy physics and medical imaging applications. Since its introduction by C. Kenney et al in 1995, many laboratories have begun research on different 3D-detector structures to simplify and industrialise the fabrication process. SINTEF MiNaLab joined the 3D collaboration in 2006 and started the first 3D fabrication run in 2007. This is the first step in an effort to fabricate affordable 3D-detectors in small to medium size production volumes. The first run was fully completed in February 2008 and preliminary results are promising. Good p-n junction characteristics have been shown on selected devices at the chip level with a leakage current of less than 0.5 nA per pixel. Thus SINTEF is the second laboratory in the world after the Stanford Nanofabrication Facility that has succeeded in demonstrating full 3D-detectors with active edge. A full 3D-stacked detector system were formed by bump-bonding the detectors to the ATLAS readout electronics, and successful particle hit maps using an Am-241 source were recorded. Most modules, however, showed largely increased leakage currents after assembly, which is due to the active edge and p-spray acting as part of the total chip pn-junction and not as a depletion stop. This paper describes the first fabrication and the encountered processing issues. The preliminary measurements on both the individual detector chips and the integrated 3D-stacked modules are discussed. A new lot has now been started on p-type wafers, which offers a more robust configuration with the active edge acting as depletion stop instead of part of the pn-junction. © 2009 IOP Publishing Ltd and SISSA.
    Original languageEnglish
    Article numberP03010
    JournalJournal of Instrumentation
    Volume4
    Issue number3
    DOIs
    Publication statusPublished - 2009

    Keywords

    • Pixelated detectors and associated VLSI electronics
    • Solid state detectors

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