Ion induced phase transformation from the soft graphitic hexagonal boron nitride (h-BN) to ultrahard cubic boron nitride (c-BN) nanoparticles is presented in the work herein. Ion implantation was used as a technique to introduce boron lithium and helium ions, at the energy of 150 keV and fluences ranging from 1 × 1014 to 1 × 1016 ions/cm2, into hot pressed, polycrystalline h-BN. Analyses using Raman Spectroscopy showed that He+, Li + and B+ led to a h-BN to c-BN phase transition, evident from the longitudinal optical (LO) Raman phonon features occurring in the implanted samples’ spectra. The nature of these phonon peaks and their downshifting is explained using the spatial phonon correlation model.
|Number of pages||4|
|Journal||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|Publication status||E-pub ahead of print - 2 Feb 2011|
- Cubic boron nitritde
- Ion implantation
- Raman spectroscopy