Full compositional control of PbSxSe1-x thin films by use of acylchalcogourato lead(II) complexes as precursors for AACVD

Selenium and sulfur derivatives of lead(II) acylchalcogourato complexes have been used to deposit PbSxSe1-x thin films by AACVD. By variation of the mole ratio of sulfur and selenium precursors in the aerosol feed solution the full range of compositions of PbSxSe1-x was obtained, i.e. 0 ≥ x ≥ 1. The films showed no contaminant phases demonstrating the potential for acylchalcogourato metal complexes as precursors for metal chalcogenide thin flms. The crystal structure for bis[N,N-diethyl-N`-2-naphthoylthioureato] lead(II) was solved and displayed the expected decreases in Pb-E bond lengths from the previously reported selenium variant.