GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors

M. R R Abdullah; Yuekun Wang; James Sexton; M. Missous; M. J. Kelly

doi:10.1109/UCMMT.2015.7460591

GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors

M. R R Abdullah, Yuekun Wang, James Sexton, M. Missous, M. J. Kelly

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A GaAs/AlAs Asymmetric spacer layer Tunnel diode (ASPAT) with very thin (10ML) layer of AlAs have been successfully grown by solid source molecular beam epitaxy (SSMBE). The Current-voltage (IV) characteristics of these ASPAT diodes were measured for both different emitter geometries and over the temperature range of 77 to 398K. A comparison was made between an in-house fabricated Schottky barrier diode (SBD) and the ASPAT in term of temperature dependencies. A close agreement is achieved for the IV characteristics of the ASPAT diode between simulated and measured data. A calculated value of cut off frequency of 200GHz can be achieved for diodes with an emitter size of 6×6 μm2 used in this study.

Original language	English
Title of host publication	2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Publisher	IEEE
ISBN (Electronic)	9781467374347
DOIs	https://doi.org/10.1109/UCMMT.2015.7460591
Publication status	Published - 26 Apr 2016
Event	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 - Cardiff, United Kingdom Duration: 14 Sept 2015 → 15 Sept 2015

Conference

Conference	8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015
Country/Territory	United Kingdom
City	Cardiff
Period	14/09/15 → 15/09/15

Keywords

ASPAT
Detector
Diode
GaAs/AlAs
Tunnelling

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10.1109/UCMMT.2015.7460591

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title = "GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors",

abstract = "A GaAs/AlAs Asymmetric spacer layer Tunnel diode (ASPAT) with very thin (10ML) layer of AlAs have been successfully grown by solid source molecular beam epitaxy (SSMBE). The Current-voltage (IV) characteristics of these ASPAT diodes were measured for both different emitter geometries and over the temperature range of 77 to 398K. A comparison was made between an in-house fabricated Schottky barrier diode (SBD) and the ASPAT in term of temperature dependencies. A close agreement is achieved for the IV characteristics of the ASPAT diode between simulated and measured data. A calculated value of cut off frequency of 200GHz can be achieved for diodes with an emitter size of 6×6 μm2 used in this study.",

keywords = "ASPAT, Detector, Diode, GaAs/AlAs, Tunnelling",

author = "Abdullah, {M. R R} and Yuekun Wang and James Sexton and M. Missous and Kelly, {M. J.}",

year = "2016",

month = apr,

day = "26",

doi = "10.1109/UCMMT.2015.7460591",

language = "English",

booktitle = "2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015",

publisher = "IEEE",

address = "United States",

note = "8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015 ; Conference date: 14-09-2015 Through 15-09-2015",

}

Abdullah, MRR, Wang, Y, Sexton, J, Missous, M & Kelly, MJ 2016, GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors. in 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015., 7460591, IEEE, 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015, Cardiff, United Kingdom, 14/09/15. https://doi.org/10.1109/UCMMT.2015.7460591

TY - GEN

T1 - GaAs/AlAs tunnelling structure

T2 - 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015

AU - Abdullah, M. R R

AU - Wang, Yuekun

AU - Sexton, James

AU - Missous, M.

AU - Kelly, M. J.

PY - 2016/4/26

Y1 - 2016/4/26

N2 - A GaAs/AlAs Asymmetric spacer layer Tunnel diode (ASPAT) with very thin (10ML) layer of AlAs have been successfully grown by solid source molecular beam epitaxy (SSMBE). The Current-voltage (IV) characteristics of these ASPAT diodes were measured for both different emitter geometries and over the temperature range of 77 to 398K. A comparison was made between an in-house fabricated Schottky barrier diode (SBD) and the ASPAT in term of temperature dependencies. A close agreement is achieved for the IV characteristics of the ASPAT diode between simulated and measured data. A calculated value of cut off frequency of 200GHz can be achieved for diodes with an emitter size of 6×6 μm2 used in this study.

AB - A GaAs/AlAs Asymmetric spacer layer Tunnel diode (ASPAT) with very thin (10ML) layer of AlAs have been successfully grown by solid source molecular beam epitaxy (SSMBE). The Current-voltage (IV) characteristics of these ASPAT diodes were measured for both different emitter geometries and over the temperature range of 77 to 398K. A comparison was made between an in-house fabricated Schottky barrier diode (SBD) and the ASPAT in term of temperature dependencies. A close agreement is achieved for the IV characteristics of the ASPAT diode between simulated and measured data. A calculated value of cut off frequency of 200GHz can be achieved for diodes with an emitter size of 6×6 μm2 used in this study.

KW - ASPAT

KW - Detector

KW - Diode

KW - GaAs/AlAs

KW - Tunnelling

UR - http://www.scopus.com/inward/record.url?scp=84974555563&partnerID=8YFLogxK

U2 - 10.1109/UCMMT.2015.7460591

DO - 10.1109/UCMMT.2015.7460591

M3 - Conference contribution

AN - SCOPUS:84974555563

BT - 2015 8th UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT 2015

PB - IEEE

Y2 - 14 September 2015 through 15 September 2015

ER -

GaAs/AlAs tunnelling structure: Temperature dependence of ASPAT detectors

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