Gallium phosphide latching diode

A. R. Peaker, B. Hamilton

Research output: Contribution to journalArticlepeer-review

Abstract

A new type of green-light-emitting negative-resistance gallium phosphide diode has been produced by diffusing a p-n junction into a single n-type liquid epitaxy growth. This growth includes a narrow high-resistivity layer introduced by the transient incorporation of deep acceptors. The negative resistance has been shown to be due to optical feedback between the emitting junction and the photosensitive high-resistivity region. External quantum efficiencies of 0.08% at 565 nm with a current density of 11 A cm-2 have been obtained from these devices when used in a true latching mode with a standing bias of 5 V and turn-on turn-off pulses of ±4 V.

Original languageEnglish
Pages (from-to)414-417
Number of pages4
JournalApplied Physics Letters
Volume24
Issue number9
DOIs
Publication statusPublished - 1 Dec 1974

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