Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

S. A. McQuaid; R. E. Pritchard; R. C. Newman; S. O'Hagan; M. Missous

doi:10.1016/0921-5107(93)90217-B

Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

S. A. McQuaid^*, R. E. Pritchard, R. C. Newman, S. O'Hagan, M. Missous

^*Corresponding author for this work

EEE - Academic & Research

Imperial College London

Research output: Contribution to journal › Article › peer-review

Abstract

Point defects and complexes in silicon doped GaAs grown at low temperatures were investigated. Large differences between the donor and carrier concentrations imply that the crystals contain high concentrations of compensating defects. The detection of Si_GaV_Ga pairs confirms the expectation that they are gallium vacancies and their concentration appears to be controlled by the Fermi level or silicon concentration. The lattice expansion of the low temperature GaAs is related to the concentration of As_Ga antisite related defects which do not appear to affect significantly the electrical properties of the material. The annealing behaviour may be explained by the nucleation of Si clustering by V_Ga related defects.

Original language	English
Pages (from-to)	23-26
Number of pages	4
Journal	Materials Science and Engineering B
Volume	22
Issue number	1
DOIs	https://doi.org/10.1016/0921-5107(93)90217-B
Publication status	Published - 20 Dec 1993

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abstract = "Point defects and complexes in silicon doped GaAs grown at low temperatures were investigated. Large differences between the donor and carrier concentrations imply that the crystals contain high concentrations of compensating defects. The detection of SiGaVGa pairs confirms the expectation that they are gallium vacancies and their concentration appears to be controlled by the Fermi level or silicon concentration. The lattice expansion of the low temperature GaAs is related to the concentration of AsGa antisite related defects which do not appear to affect significantly the electrical properties of the material. The annealing behaviour may be explained by the nucleation of Si clustering by VGa related defects.",

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AU - McQuaid, S. A.

AU - Pritchard, R. E.

AU - Newman, R. C.

AU - O'Hagan, S.

AU - Missous, M.

PY - 1993/12/20

Y1 - 1993/12/20

N2 - Point defects and complexes in silicon doped GaAs grown at low temperatures were investigated. Large differences between the donor and carrier concentrations imply that the crystals contain high concentrations of compensating defects. The detection of SiGaVGa pairs confirms the expectation that they are gallium vacancies and their concentration appears to be controlled by the Fermi level or silicon concentration. The lattice expansion of the low temperature GaAs is related to the concentration of AsGa antisite related defects which do not appear to affect significantly the electrical properties of the material. The annealing behaviour may be explained by the nucleation of Si clustering by VGa related defects.

AB - Point defects and complexes in silicon doped GaAs grown at low temperatures were investigated. Large differences between the donor and carrier concentrations imply that the crystals contain high concentrations of compensating defects. The detection of SiGaVGa pairs confirms the expectation that they are gallium vacancies and their concentration appears to be controlled by the Fermi level or silicon concentration. The lattice expansion of the low temperature GaAs is related to the concentration of AsGa antisite related defects which do not appear to affect significantly the electrical properties of the material. The annealing behaviour may be explained by the nucleation of Si clustering by VGa related defects.

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U2 - 10.1016/0921-5107(93)90217-B

DO - 10.1016/0921-5107(93)90217-B

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VL - 22

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JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1

ER -

Gallium vacancy related defects in silicon doped GaAs grown at low temperatures

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