GaN/InGaN quantum wells grown in a close coupled showerhead reactor

E. J. Thrush; M. J. Kappers; P. Dawson; M. E. Vickers; J. Barnard; D. Graham; G. Makaronidis; F. D G Rayment; L. Considine; C. J. Humphreys

doi:10.1016/S0022-0248(02)01929-2

GaN/InGaN quantum wells grown in a close coupled showerhead reactor

E. J. Thrush, M. J. Kappers, P. Dawson, M. E. Vickers, J. Barnard, D. Graham, G. Makaronidis, F. D G Rayment, L. Considine, C. J. Humphreys

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

Alternative regimes for the growth of GaN/InGaN quantum wells in a close coupled showerhead reactor have been investigated and their respective merits discussed. State-of-the-art characteristics have been seen from the best structures using 300 and 6 K photoluminescence, high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy to characterize the material. The fabrication of high-quality electroluminescent devices from selected structures has shown the practical relevance of these studies. © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Title of host publication	Journal of Crystal Growth\|J Cryst Growth
Editors	A. Krost, B. Mullin, M. Weyers
Place of Publication	Journal of Crystal Growth
Publisher	Elsevier BV
Pages	518-522
Number of pages	4
Volume	248
DOIs	https://doi.org/10.1016/S0022-0248(02)01929-2
Publication status	Published - Feb 2003
Event	Proceedings of the eleventh international conference on MOVPE XI - Berlin Duration: 1 Feb 2003 → …

Conference

Conference	Proceedings of the eleventh international conference on MOVPE XI
City	Berlin
Period	1/02/03 → …

Keywords

A1. Photoluminescence
A1. X-ray diffraction
A3. Metalorganic vapor phase deposition
A3. Quantum wells
B1. Nitrides

Access to Document

10.1016/S0022-0248(02)01929-2

Cite this

Thrush, E. J., Kappers, M. J., Dawson, P., Vickers, M. E., Barnard, J., Graham, D., Makaronidis, G., Rayment, F. D. G., Considine, L., & Humphreys, C. J. (2003). GaN/InGaN quantum wells grown in a close coupled showerhead reactor. In A. Krost, B. Mullin, & M. Weyers (Eds.), Journal of Crystal Growth|J Cryst Growth (Vol. 248, pp. 518-522). Elsevier BV. https://doi.org/10.1016/S0022-0248(02)01929-2

@inproceedings{326f5a247d0b41f28f784fe14f8287a8,

title = "GaN/InGaN quantum wells grown in a close coupled showerhead reactor",

abstract = "Alternative regimes for the growth of GaN/InGaN quantum wells in a close coupled showerhead reactor have been investigated and their respective merits discussed. State-of-the-art characteristics have been seen from the best structures using 300 and 6 K photoluminescence, high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy to characterize the material. The fabrication of high-quality electroluminescent devices from selected structures has shown the practical relevance of these studies. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "A1. Photoluminescence, A1. X-ray diffraction, A3. Metalorganic vapor phase deposition, A3. Quantum wells, B1. Nitrides",

author = "Thrush, {E. J.} and Kappers, {M. J.} and P. Dawson and Vickers, {M. E.} and J. Barnard and D. Graham and G. Makaronidis and Rayment, {F. D G} and L. Considine and Humphreys, {C. J.}",

year = "2003",

month = feb,

doi = "10.1016/S0022-0248(02)01929-2",

language = "English",

volume = "248",

pages = "518--522",

editor = "A. Krost and B. Mullin and M. Weyers",

booktitle = "Journal of Crystal Growth|J Cryst Growth",

publisher = "Elsevier BV",

address = "Netherlands",

note = "Proceedings of the eleventh international conference on MOVPE XI ; Conference date: 01-02-2003",

}

Thrush, EJ, Kappers, MJ, Dawson, P, Vickers, ME, Barnard, J, Graham, D, Makaronidis, G, Rayment, FDG, Considine, L & Humphreys, CJ 2003, GaN/InGaN quantum wells grown in a close coupled showerhead reactor. in A Krost, B Mullin & M Weyers (eds), Journal of Crystal Growth|J Cryst Growth. vol. 248, Elsevier BV, Journal of Crystal Growth, pp. 518-522, Proceedings of the eleventh international conference on MOVPE XI, Berlin, 1/02/03. https://doi.org/10.1016/S0022-0248(02)01929-2

TY - GEN

T1 - GaN/InGaN quantum wells grown in a close coupled showerhead reactor

AU - Thrush, E. J.

AU - Kappers, M. J.

AU - Dawson, P.

AU - Vickers, M. E.

AU - Barnard, J.

AU - Graham, D.

AU - Makaronidis, G.

AU - Rayment, F. D G

AU - Considine, L.

AU - Humphreys, C. J.

PY - 2003/2

Y1 - 2003/2

N2 - Alternative regimes for the growth of GaN/InGaN quantum wells in a close coupled showerhead reactor have been investigated and their respective merits discussed. State-of-the-art characteristics have been seen from the best structures using 300 and 6 K photoluminescence, high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy to characterize the material. The fabrication of high-quality electroluminescent devices from selected structures has shown the practical relevance of these studies. © 2002 Elsevier Science B.V. All rights reserved.

AB - Alternative regimes for the growth of GaN/InGaN quantum wells in a close coupled showerhead reactor have been investigated and their respective merits discussed. State-of-the-art characteristics have been seen from the best structures using 300 and 6 K photoluminescence, high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy to characterize the material. The fabrication of high-quality electroluminescent devices from selected structures has shown the practical relevance of these studies. © 2002 Elsevier Science B.V. All rights reserved.

KW - A1. Photoluminescence

KW - A1. X-ray diffraction

KW - A3. Metalorganic vapor phase deposition

KW - A3. Quantum wells

KW - B1. Nitrides

U2 - 10.1016/S0022-0248(02)01929-2

DO - 10.1016/S0022-0248(02)01929-2

M3 - Conference contribution

VL - 248

SP - 518

EP - 522

BT - Journal of Crystal Growth|J Cryst Growth

A2 - Krost, A.

A2 - Mullin, B.

A2 - Weyers, M.

PB - Elsevier BV

CY - Journal of Crystal Growth

T2 - Proceedings of the eleventh international conference on MOVPE XI

Y2 - 1 February 2003

ER -

GaN/InGaN quantum wells grown in a close coupled showerhead reactor

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this