GaN/InGaN quantum wells grown in a close coupled showerhead reactor

E. J. Thrush, M. J. Kappers, P. Dawson, M. E. Vickers, J. Barnard, D. Graham, G. Makaronidis, F. D G Rayment, L. Considine, C. J. Humphreys

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    Alternative regimes for the growth of GaN/InGaN quantum wells in a close coupled showerhead reactor have been investigated and their respective merits discussed. State-of-the-art characteristics have been seen from the best structures using 300 and 6 K photoluminescence, high-resolution X-ray diffraction, atomic force microscopy and transmission electron microscopy to characterize the material. The fabrication of high-quality electroluminescent devices from selected structures has shown the practical relevance of these studies. © 2002 Elsevier Science B.V. All rights reserved.
    Original languageEnglish
    Title of host publicationJournal of Crystal Growth|J Cryst Growth
    EditorsA. Krost, B. Mullin, M. Weyers
    Place of PublicationJournal of Crystal Growth
    PublisherElsevier BV
    Pages518-522
    Number of pages4
    Volume248
    DOIs
    Publication statusPublished - Feb 2003
    EventProceedings of the eleventh international conference on MOVPE XI - Berlin
    Duration: 1 Feb 2003 → …

    Conference

    ConferenceProceedings of the eleventh international conference on MOVPE XI
    CityBerlin
    Period1/02/03 → …

    Keywords

    • A1. Photoluminescence
    • A1. X-ray diffraction
    • A3. Metalorganic vapor phase deposition
    • A3. Quantum wells
    • B1. Nitrides

    Fingerprint

    Dive into the research topics of 'GaN/InGaN quantum wells grown in a close coupled showerhead reactor'. Together they form a unique fingerprint.

    Cite this