Ga2O3 Schottky Avalanche Solar-Blind Photodiode with High Responsivity and Photo-to-Dark Current Ratio

Shiqi Yan, Teng Jiao, Zijian Ding, Xinyu Zhou, Xingqi Ji, Xin Dong, Jiawei Zhang, Qian Xin, Aimin Song

Research output: Contribution to journalArticlepeer-review

Abstract

Solar-blind photodetectors have attracted extensive attention due to their advantages such as ultra-low background noise and all-weather. In this study, the planar Ti/Ga2O3/Au Schottky avalanche photodetector (APD) is fabricated based on β-Ga2O3 epitaxial film on the sapphire substrate grown by metal–organic chemical vapor deposition. The Schottky APD exhibits a high responsivity of 9780.23 A W−1, an ultrahigh photo-to-dark current ratio of 1.88 × 107, an external quantum efficiency of 4.77 × 106%, a specific detectivity of 9.48 × 1014 Jones, with an ultrahigh gain of 1 × 106 under 254 nm light illumination at 60 V reverse bias, indicating high application potential for solar-blind imaging. The superior photoresponse performances ascribe to the effective carrier avalanche multiplication, which contributes to the high photocurrent, and the high quality Schottky junction depletion, which leads to the low dark current.

Original languageEnglish
Article number2300297
JournalAdvanced Electronic Materials
Volume9
Issue number11
DOIs
Publication statusPublished - Nov 2023

Keywords

  • avalanche photodetectors
  • GaO
  • photo-to-dark current ratio
  • schottky junction
  • solar-blind photodetectors

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