Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

Matthew Hamer, Endre Tovari, Mengjian Zhu, Michael D. Thompson, Alexander Mayorov, Jonathon Prance, Yongjin Lee, Richard P. Haley, Zakhar R. Kudrynskyi, Amalia Patane, Daniel Terry, Zakhar D. Kovalyuk, Klaus Ensslin, Andrey, V Kretinin, Andre Geim, Roman Gorbachev

    Research output: Contribution to journalArticlepeer-review


    Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.
    Original languageEnglish
    Pages (from-to)3950-3955
    Number of pages6
    JournalNano Letters
    Issue number6
    Early online date15 May 2018
    Publication statusPublished - 13 Jun 2018


    • charge quantization
    • electronic devices
    • indium selenide
    • quantum dots
    • quantum point contacts
    • Two-dimensional materials

    Research Beacons, Institutes and Platforms

    • National Graphene Institute


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