Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

Matthew Hamer; Endre Tovari; Mengjian Zhu; Michael D. Thompson; Alexander Mayorov; Jonathon Prance; Yongjin Lee; Richard P. Haley; Zakhar R. Kudrynskyi; Amalia Patane; Daniel Terry; Zakhar D. Kovalyuk; Klaus Ensslin; Andrey, V Kretinin; Andre Geim; Roman Gorbachev

doi:10.1021/acs.nanolett.8b01376

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

Matthew Hamer, Endre Tovari, Mengjian Zhu, Michael D. Thompson, Alexander Mayorov, Jonathon Prance, Yongjin Lee, Richard P. Haley, Zakhar R. Kudrynskyi, Amalia Patane, Daniel Terry, Zakhar D. Kovalyuk, Klaus Ensslin, Andrey, V Kretinin, Andre Geim, Roman Gorbachev

Research output: Contribution to journal › Article › peer-review

Abstract

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

Original language	English
Pages (from-to)	3950-3955
Number of pages	6
Journal	Nano Letters
Volume	18
Issue number	6
Early online date	15 May 2018
DOIs	https://doi.org/10.1021/acs.nanolett.8b01376
Publication status	Published - 13 Jun 2018

Keywords

charge quantization
electronic devices
indium selenide
quantum dots
quantum point contacts
Two-dimensional materials

Research Beacons, Institutes and Platforms

National Graphene Institute

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10.1021/acs.nanolett.8b01376

http://eprints.nottingham.ac.uk/51829/

Cite this

Hamer, M., Tovari, E., Zhu, M., Thompson, M. D., Mayorov, A., Prance, J., Lee, Y., Haley, R. P., Kudrynskyi, Z. R., Patane, A., Terry, D., Kovalyuk, Z. D., Ensslin, K., Kretinin, A. V., Geim, A., & Gorbachev, R. (2018). Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures. Nano Letters, 18(6), 3950-3955. https://doi.org/10.1021/acs.nanolett.8b01376

@article{e0e4f26e72df4769966eab3b901e9733,

title = "Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures",

abstract = "Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.",

keywords = "charge quantization, electronic devices, indium selenide, quantum dots, quantum point contacts, Two-dimensional materials",

author = "Matthew Hamer and Endre Tovari and Mengjian Zhu and Thompson, {Michael D.} and Alexander Mayorov and Jonathon Prance and Yongjin Lee and Haley, {Richard P.} and Kudrynskyi, {Zakhar R.} and Amalia Patane and Daniel Terry and Kovalyuk, {Zakhar D.} and Klaus Ensslin and Kretinin, {Andrey, V} and Andre Geim and Roman Gorbachev",

year = "2018",

month = jun,

day = "13",

doi = "10.1021/acs.nanolett.8b01376",

language = "English",

volume = "18",

pages = "3950--3955",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

AU - Hamer, Matthew

AU - Tovari, Endre

AU - Zhu, Mengjian

AU - Thompson, Michael D.

AU - Mayorov, Alexander

AU - Prance, Jonathon

AU - Lee, Yongjin

AU - Haley, Richard P.

AU - Kudrynskyi, Zakhar R.

AU - Patane, Amalia

AU - Terry, Daniel

AU - Kovalyuk, Zakhar D.

AU - Ensslin, Klaus

AU - Kretinin, Andrey, V

AU - Geim, Andre

AU - Gorbachev, Roman

PY - 2018/6/13

Y1 - 2018/6/13

N2 - Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

AB - Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

KW - charge quantization

KW - electronic devices

KW - indium selenide

KW - quantum dots

KW - quantum point contacts

KW - Two-dimensional materials

U2 - 10.1021/acs.nanolett.8b01376

DO - 10.1021/acs.nanolett.8b01376

M3 - Article

SN - 1530-6984

VL - 18

SP - 3950

EP - 3955

JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

Gate-Defined Quantum Confinement in InSe-Based van der Waals Heterostructures

Abstract

Keywords

Research Beacons, Institutes and Platforms

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