Generation lifetime and hold time of small MOS devices

N. O. Pearce; A. R. Peaker; B. Hamilton

Generation lifetime and hold time of small MOS devices

N. O. Pearce^*, A. R. Peaker, B. Hamilton

^*Corresponding author for this work

EEE - Academic & Research

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels.

Original language	English
Title of host publication	ESSDERC 1988 - 18th European Solid State Device Research Conference
Editors	J.-P. Nougier, D. Gasquet
Publisher	IEEE Computer Society
Pages	C437-C440
ISBN (Electronic)	2868830994
ISBN (Print)	9782868830999
Publication status	Published - 1 Jan 1988
Event	18th European Solid State Device Research Conference - Montpellier, France Duration: 13 Sept 1988 → 16 Sept 1988

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	18th European Solid State Device Research Conference
Abbreviated title	ESSDERC 1988
Country/Territory	France
City	Montpellier
Period	13/09/88 → 16/09/88

Cite this

@inproceedings{e3957157a32d45a69c6a5a9d022b66e5,

title = "Generation lifetime and hold time of small MOS devices",

abstract = "A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels.",

author = "Pearce, {N. O.} and Peaker, {A. R.} and B. Hamilton",

year = "1988",

month = jan,

day = "1",

language = "English",

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series = "European Solid-State Device Research Conference",

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pages = "C437--C440",

editor = "J.-P. Nougier and D. Gasquet",

booktitle = "ESSDERC 1988 - 18th European Solid State Device Research Conference",

address = "United States",

note = "18th European Solid State Device Research Conference, ESSDERC 1988 ; Conference date: 13-09-1988 Through 16-09-1988",

}

Pearce, NO, Peaker, AR & Hamilton, B 1988, Generation lifetime and hold time of small MOS devices. in J-P Nougier & D Gasquet (eds), ESSDERC 1988 - 18th European Solid State Device Research Conference., 5436844, European Solid-State Device Research Conference, IEEE Computer Society , pp. C437-C440, 18th European Solid State Device Research Conference, Montpellier, France, 13/09/88.

Generation lifetime and hold time of small MOS devices. / Pearce, N. O.; Peaker, A. R.; Hamilton, B.
ESSDERC 1988 - 18th European Solid State Device Research Conference. ed. / J.-P. Nougier; D. Gasquet. IEEE Computer Society , 1988. p. C437-C440 5436844 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Generation lifetime and hold time of small MOS devices

AU - Pearce, N. O.

AU - Peaker, A. R.

AU - Hamilton, B.

PY - 1988/1/1

Y1 - 1988/1/1

N2 - A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels.

AB - A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels.

UR - http://www.scopus.com/inward/record.url?scp=84907718178&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84907718178

SN - 9782868830999

T3 - European Solid-State Device Research Conference

SP - C437-C440

BT - ESSDERC 1988 - 18th European Solid State Device Research Conference

A2 - Nougier, J.-P.

A2 - Gasquet, D.

PB - IEEE Computer Society

T2 - 18th European Solid State Device Research Conference

Y2 - 13 September 1988 through 16 September 1988

ER -

Generation lifetime and hold time of small MOS devices

Abstract

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Conference

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