Generation lifetime and hold time of small MOS devices

N. O. Pearce, A. R. Peaker, B. Hamilton

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A new method for characterising inversion transients in metal-oxide-semiconductor devices is reported. The technique uses Isothermal Deep Level Transient Spectroscopy to separate generation currents from various sources. The combination of activation graphs with Zerbst plots gives a complete characterisation of devices with dimensions down to sub-micron levels.

Original languageEnglish
Title of host publicationESSDERC 1988 - 18th European Solid State Device Research Conference
EditorsJ.-P. Nougier, D. Gasquet
PublisherIEEE Computer Society
PagesC437-C440
ISBN (Electronic)2868830994
ISBN (Print)9782868830999
Publication statusPublished - 1 Jan 1988
Event18th European Solid State Device Research Conference - Montpellier, France
Duration: 13 Sept 198816 Sept 1988

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference18th European Solid State Device Research Conference
Abbreviated titleESSDERC 1988
Country/TerritoryFrance
CityMontpellier
Period13/09/8816/09/88

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