Gentle FUSI NiSi metal gate process for high-<i> k dielectric screening

HDB Gottlob; Max C Lemme; M Schmidt; TJ Echtermeyer; T Mollenhauer; H Kurz; Karim Cherkaoui; PK Hurley; SB Newcomb

Gentle FUSI NiSi metal gate process for high-<i> k dielectric screening

HDB Gottlob, Max C Lemme, M Schmidt, TJ Echtermeyer, T Mollenhauer, H Kurz, Karim Cherkaoui, PK Hurley, SB Newcomb

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2019-2021
Number of pages	3
Journal	Microelectronic Engineering
Volume	85
Issue number	10
Publication status	Published - 2008

Cite this

@article{66a53be98ee0402b8ef517e5092635aa,

title = "Gentle FUSI NiSi metal gate process for high- k dielectric screening",

author = "HDB Gottlob and Lemme, {Max C} and M Schmidt and TJ Echtermeyer and T Mollenhauer and H Kurz and Karim Cherkaoui and PK Hurley and SB Newcomb",

year = "2008",

language = "English",

volume = "85",

pages = "2019--2021",

journal = "Microelectronic Engineering",

publisher = "Elsevier BV",

number = "10",

}

TY - JOUR

T1 - Gentle FUSI NiSi metal gate process for high- k dielectric screening

AU - Gottlob, HDB

AU - Lemme, Max C

AU - Schmidt, M

AU - Echtermeyer, TJ

AU - Mollenhauer, T

AU - Kurz, H

AU - Cherkaoui, Karim

AU - Hurley, PK

AU - Newcomb, SB

PY - 2008

Y1 - 2008

M3 - Article

VL - 85

SP - 2019

EP - 2021

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 10

ER -