Gettering and deep states in P-type Czochralski silicon

N. Jha, A. R. Peaker, G. Keefe-Fraundorf

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

This paper reports deep state measurements on boron doped Czochralski silicon. A comparison is made between four gettering technologies after the slices have been subjected to oxidation cycles in steam at 1100°C for two hours. An analysis of the results is made using a diffusion model of gettering.

Original languageEnglish
Title of host publicationESSDERC 1987 - 17th European Solid State Device Research Conference
PublisherIEEE Computer Society
Pages565-568
Number of pages4
ISBN (Electronic)0444704779
ISBN (Print)9780444704771
Publication statusPublished - 1987
Event17th European Solid State Device Research Conference, ESSDERC 1987 - Bologna, Italy
Duration: 14 Sept 198717 Sept 1987

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference17th European Solid State Device Research Conference, ESSDERC 1987
Country/TerritoryItaly
CityBologna
Period14/09/8717/09/87

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