GHz class low-power flash ADC for broadband communications

J. Sexton; T. Tauqeer; M. Mohiuddin; M. Missous

doi:10.1109/ASDAM.2008.4743326

GHz class low-power flash ADC for broadband communications

J. Sexton, T. Tauqeer, M. Mohiuddin, M. Missous

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A low-power (∼400mW) high-speed (2-4GS/s) 4-bit Analogue-to-Digital Converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (42°C) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard Digital Signal Processing (DSP) systems whilst dissipating only 40OmW. © 2008 IEEE.

Original language	English
Title of host publication	ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems\|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems
Pages	235-238
Number of pages	3
DOIs	https://doi.org/10.1109/ASDAM.2008.4743326
Publication status	Published - 2008
Event	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 - Smolenice Duration: 1 Jul 2008 → … http://<Go to ISI>://000263223200047

Conference

Conference	7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008
City	Smolenice
Period	1/07/08 → …
Internet address	http://<Go to ISI>://000263223200047

Access to Document

10.1109/ASDAM.2008.4743326

Cite this

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title = "GHz class low-power flash ADC for broadband communications",

abstract = "A low-power (∼400mW) high-speed (2-4GS/s) 4-bit Analogue-to-Digital Converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (42°C) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard Digital Signal Processing (DSP) systems whilst dissipating only 40OmW. {\textcopyright} 2008 IEEE.",

author = "J. Sexton and T. Tauqeer and M. Mohiuddin and M. Missous",

note = "Sexton, J. Tauqeer, T. Mohiuddin, M. Missous, M.; 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008 ; Conference date: 01-07-2008",

year = "2008",

doi = "10.1109/ASDAM.2008.4743326",

language = "English",

isbn = "9781424423262",

pages = "235--238",

booktitle = "ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems",

url = "http://<Go to ISI>://000263223200047",

}

Sexton, J, Tauqeer, T, Mohiuddin, M & Missous, M 2008, GHz class low-power flash ADC for broadband communications. in ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. pp. 235-238, 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008, Smolenice, 1/07/08. https://doi.org/10.1109/ASDAM.2008.4743326

GHz class low-power flash ADC for broadband communications. / Sexton, J.; Tauqeer, T.; Mohiuddin, M. et al.
ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems. 2008. p. 235-238.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - GHz class low-power flash ADC for broadband communications

AU - Sexton, J.

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N2 - A low-power (∼400mW) high-speed (2-4GS/s) 4-bit Analogue-to-Digital Converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (42°C) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard Digital Signal Processing (DSP) systems whilst dissipating only 40OmW. © 2008 IEEE.

AB - A low-power (∼400mW) high-speed (2-4GS/s) 4-bit Analogue-to-Digital Converter (ADC) based on InP/InGaAs heterojunction bipolar transistors (HBT) has been designed and simulated. The technology utilised two novel developments. Firstly stoichiometric conditions permitted growth at a relatively low temperature (42°C) while conserving extremely high-quality materials. Secondly dimeric phosphorus generated from a gallium phosphide (GaP) decomposition source has lead to excellent device properties. The complete ADC shows state-of-the-art performance and includes an interface for connection to standard Digital Signal Processing (DSP) systems whilst dissipating only 40OmW. © 2008 IEEE.

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DO - 10.1109/ASDAM.2008.4743326

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BT - ASDAM 2008 - Conference Proceedings of the 7th International Conference on Advanced Semiconductor Devices and Microsystems|ASDAM - Conf. Proc. Int. Conf. Adv. Semicond. Dev. Microsystems

T2 - 7th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2008

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ER -

GHz class low-power flash ADC for broadband communications

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